MT53E2G32D4NQ-046 WT:A TR
| Part Description |
IC DRAM 64GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 484 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53E2G32D4NQ-046 WT:A TR – IC DRAM 64Gbit 2.133GHz 200-VFBGA
The MT53E2G32D4NQ-046 WT:A TR is a volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It provides a 64 Gbit memory array organized as 2G × 32 and operates at a clock frequency of 2.133 GHz.
Designed for compact memory subsystems, this device combines high clock rate and low-voltage operation in a 200-VFBGA (10×14.5) package, with an operating temperature range of -30°C to 85°C.
Key Features
- Memory Core: 64 Gbit DRAM organized as 2G × 32, implemented in Mobile LPDDR4 SDRAM technology for volatile main memory functions.
- Performance: 2.133 GHz clock frequency to support high-speed memory operations.
- Power: 1.1 V nominal supply voltage to support low-voltage system designs.
- Package: 200-VFBGA package (10×14.5) providing a compact footprint for space-constrained applications.
- Operating Temperature: Rated for -30°C to 85°C (TC), enabling use across a broad thermal range.
Typical Applications
- Mobile devices — Fits mobile LPDDR4 memory subsystems requiring 64 Gbit density and high clock rates.
- Handheld computing — Provides compact, low-voltage DRAM suitable for tightly packaged handheld platforms.
- Embedded memory modules — Used where a 200‑VFBGA package and -30°C to 85°C operating range are required.
Unique Advantages
- High-density memory: 64 Gbit capacity enables larger memory footprints without increasing component count.
- High-speed operation: 2.133 GHz clock frequency supports demanding memory throughput requirements.
- Low-voltage design: 1.1 V supply reduces power draw compared with higher-voltage alternatives.
- Compact packaging: 200‑VFBGA (10×14.5) minimizes PCB area for compact system designs.
- Wide temperature range: -30°C to 85°C rating supports deployment across varied thermal environments.
Why Choose IC DRAM 64GBIT 2.133GHZ 200VFBGA?
IC DRAM 64GBIT 2.133GHZ 200VFBGA balances high clock speed, substantial memory capacity, and low-voltage operation in a compact 200-VFBGA package. The device is well suited to designs that require Mobile LPDDR4 DRAM performance within constrained board space and a broad operating temperature range.
Manufactured by Micron Technology Inc., this DRAM device provides a combination of density, speed, and packaging that aligns with mobile and compact embedded memory subsystem requirements.
Request a quote or contact sales to discuss pricing, lead times, and sample availability for MT53E2G32D4NQ-046 WT:A TR.
