MT53E2G32D8QD-046 WT:E TR
| Part Description |
IC DRAM 64GBIT 2.133GHZ FBGA |
|---|---|
| Quantity | 275 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53E2G32D8QD-046 WT:E TR – IC DRAM 64Gbit 2.133GHz Mobile LPDDR4
The MT53E2G32D8QD-046 WT:E TR is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It provides a 2G × 32 memory organization with a 2.133 GHz clocking option and is supplied for use in systems requiring high-speed DRAM memory.
Key attributes include a 1.1 V supply rail, FBGA package style (as indicated in the product description), and an operating temperature range of -30°C to 85°C (TC), making it suitable for a range of system-level memory implementations.
Key Features
- Memory Type & Format Volatile DRAM implemented as Mobile LPDDR4 SDRAM for standard mobile-class DRAM architecture.
- Capacity & Organization 64 Gbit total capacity arranged as 2G × 32 to support wide data paths and high-density memory designs.
- Clock Frequency 2.133 GHz clocking capability for high-rate memory transactions.
- Power Low-voltage operation at 1.1 V supply.
- Package FBGA package style as indicated in the product description.
- Operating Temperature Rated for -30°C to 85°C (TC), enabling use across a broad temperature range.
Typical Applications
- Mobile devices — Mobile LPDDR4 architecture and 1.1 V operation align with memory requirements in mobile and handheld platforms.
- High-density memory subsystems — 64 Gbit capacity and 2G × 32 organization support designs needing large on-board DRAM arrays.
- High-bandwidth embedded systems — 2.133 GHz clocking provides the transfer rates required by systems that demand faster memory throughput.
Unique Advantages
- High-capacity memory: 64 Gbit density enables consolidation of memory footprints in space-constrained designs.
- Wide data organization: 2G × 32 arrangement supports wider data-path implementations for system memory designs.
- High-speed operation: 2.133 GHz clock frequency supports faster memory transactions where throughput is required.
- Low-voltage supply: 1.1 V operation reduces power rail complexity in low-voltage system architectures.
- Broad temperature range: -30°C to 85°C (TC) rating supports deployments across varied thermal environments.
Why Choose MT53E2G32D8QD-046 WT:E TR?
The MT53E2G32D8QD-046 WT:E TR combines Mobile LPDDR4 SDRAM architecture with 64 Gbit capacity and 2.133 GHz clocking to address designs that require high-density, high-rate volatile memory. Its 1.1 V supply and FBGA form factor support compact, low-voltage system implementations.
This device is appropriate for engineers and procurement teams specifying memory for mobile-class products, high-density memory subsystems, and embedded platforms that require a defined operating temperature range and standardized LPDDR4 behavior.
Request a quote or submit an inquiry to discuss pricing, lead time, and availability for the MT53E2G32D8QD-046 WT:E TR.
