MT53E512M64D2HJ-046 AAT:B
| Part Description |
IC DRAM 32GBIT PAR 556WFBGA |
|---|---|
| Quantity | 139 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 39 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 556-WFBGA (12.4x12.4) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | 3.5 ns | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TC) | Write Cycle Time Word Page | 18 ns | Packaging | 556-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | N/A | HTS Code | N/A |
Overview of MT53E512M64D2HJ-046 AAT:B – IC DRAM 32Gbit PAR 556WFBGA
The MT53E512M64D2HJ-046 AAT:B is a 32 Gbit volatile DRAM device implemented in mobile LPDDR4X SDRAM architecture with a parallel memory interface and a 512M x 64 organization. It delivers high data throughput at a 2133 MHz clock rate (4266 Mb/s data rate per pin) in a compact 556-ball WFBGA package (12.4 × 12.4 mm).
Engineered for systems requiring high bandwidth, low-voltage operation and automotive qualification, the device combines programmable latency and burst options with on-die power and refresh management to support robust memory subsystems in demanding environments.
Key Features
- Core & architecture LPDDR4X/LPDDR4 SDRAM architecture with 16n prefetch and 8 internal banks per channel for concurrent bank operation and efficient command scheduling.
- Memory capacity & organization 32 Gbit total capacity in a 512M x 64 configuration, provided as multi-die options per the part numbering convention.
- Performance 2133 MHz clock rate (2.133 GHz) with a 4266 Mb/s data rate per pin, access time of 3.5 ns, and write cycle time (word page) of 18 ns; programmable READ and WRITE latencies (RL/WL) and selectable burst lengths (BL = 16, 32).
- Power & voltage Ultra-low-voltage core and I/O supply options. Documented supply ranges include VDD1 = 1.70–1.95 V, VDD2 = 1.06–1.17 V, and VDDQ options (0.57–0.65 V or 1.06–1.17 V), enabling low-power operation.
- Reliability & automotive qualification AEC-Q100 qualification and Automotive grade designation provide documented suitability for automotive applications; operating temperature specified to -40°C to 105°C (TC).
- Power-management & refresh Directed per-bank refresh for concurrent bank operation, partial-array self refresh (PASR), an on-chip temperature sensor to control self-refresh rate, and clock-stop capability to optimize power usage.
- Signal & I/O features Bidirectional/differential data strobe per byte lane, single-data-rate CMD/ADR, programmable output drive strength (DS), and programmable ODT (VSS) termination.
- Package 556-ball TFBGA/WFBGA (12.4 × 12.4 mm) package for high-density board integration in space-constrained designs.
Typical Applications
- Automotive memory subsystems — AEC-Q100 qualification and Automotive grade make the device suitable for automotive electronics that require robust, high-density DRAM.
- Mobile LPDDR4X systems — Mobile LPDDR4X technology supports high data-rate memory for portable systems needing low-voltage, high-bandwidth DRAM.
- High-bandwidth embedded systems — 4266 Mb/s per-pin data rate and programmable latencies support embedded designs requiring sustained throughput and flexible timing.
Unique Advantages
- Automotive-grade qualification: AEC-Q100 designation and Automotive grade classification provide traceable qualification for automotive deployable designs.
- High per-pin bandwidth: 4266 Mb/s data rate per pin at 2133 MHz supports demanding throughput requirements.
- Low-voltage operation: Multiple VDD options (including 1.06–1.17 V domain) and low VDDQ modes reduce power consumption for energy-sensitive designs.
- Advanced power and refresh controls: Directed per-bank refresh, PASR and an on-chip temperature sensor enable finer control of power and retention behavior under varying conditions.
- Compact high-density package: 556-ball WFBGA (12.4 × 12.4 mm) provides high memory density in a compact footprint for space-constrained PCBs.
Why Choose MT53E512M64D2HJ-046 AAT:B?
This LPDDR4X 32 Gbit DRAM device balances high-bandwidth performance, low-voltage operation, and automotive-grade qualification for designs that require robust memory subsystems. Programmable latencies, burst lengths, on-die power-management features and a compact 556-ball package make it suitable for systems where throughput, power efficiency and qualification traceability are required.
The MT53E512M64D2HJ-046 AAT:B is appropriate for engineers specifying high-density parallel LPDDR4X memory in automotive and mobile-oriented embedded designs seeking documented electrical ranges, temperature capability and industry-standard LPDDR4X feature sets.
Request a quote or submit an inquiry to receive pricing and availability information for the MT53E512M64D2HJ-046 AAT:B.
