MT53E512M64D2HJ-046 AUT:B

The MT53E512M64D2HJ-046 AUT:B is a 32Gbit LPDDR4X mobile SDRAM device organized as 512M x 64 with a parallel memory interface. It implements a 16n prefetch DDR architecture and is designed for high-bandwidth embedded memory applications that require low-voltage operation and compact BGA packaging.

Key value propositions include high data throughput at a 2.133 GHz clock (4266 Mb/s data rate per pin), automotive-grade qualification (AEC-Q100), and a robust operating temperature range suited for demanding environments.

Key Features

• Memory Core / Architecture LPDDR4X mobile SDRAM with 16n prefetch and 512M x 64 organization, delivering 32 Gbit capacity.
• Performance Clock frequency 2.133 GHz with a data rate of 4266 Mb/s per pin and up to 8.5 GB/s per die (x16 channel), supporting high-bandwidth data transfer.
• Timing Fast access characteristics including 3.5 ns access time and write cycle time/word page of 18 ns; programmable READ and WRITE latencies and burst lengths (BL = 16, 32).
• Power Ultra-low-voltage core and I/O supplies with VDD2/VDDQ ranges and a specified voltage supply of 1.06 V – 1.17 V for low-power operation.
• Reliability & Automotive Qualification AEC-Q100 qualification and an operating temperature range of -40°C to 125°C (TC) for reliability in harsh environments.
• Memory Management & Features Eight internal banks per channel, directed per-bank refresh for concurrent bank operation, partial-array self refresh (PASR), and an on-chip temperature sensor to control self-refresh rate.
• I/O & Signal Bidirectional/differential data strobe per byte lane, selectable output drive strength, programmable VSS (ODT) termination, and clock-stop capability.
• Package 556-ball TFBGA/WFBGA package (12.4 mm × 12.4 mm) for space-efficient system integration; RoHS-compliant packaging noted in the device documentation.

Typical Applications

• Automotive Systems Memory for automotive applications requiring AEC-Q100 qualification and extended temperature range, such as infotainment and advanced driver interfaces.
• Mobile and Handheld Platforms High-bandwidth LPDDR4X memory suited to mobile designs that demand compact package size and low-voltage operation.
• High-Bandwidth Embedded Systems Use in embedded designs where sustained data throughput and programmable latencies support performance-critical tasks.

Unique Advantages

• High sustained throughput: 2.133 GHz clock and 4266 Mb/s per pin data rate enable substantial bandwidth for demanding data flows.
• Automotive-qualified robustness: AEC-Q100 qualification combined with -40°C to 125°C operating range supports deployment in temperature-challenging environments.
• Low-voltage efficiency: Ultra-low-voltage core and I/O supplies with a defined 1.06 V–1.17 V supply window reduce power consumption in battery- or power-constrained systems.
• Flexible memory control: Programmable RL/WL, selectable burst lengths (16, 32), directed per-bank refresh, and PASR simplify timing optimization and power management.
• Compact, industry-standard BGA: 556-ball TFBGA/WFBGA (12.4 × 12.4 mm) package supports high-density board layouts while maintaining thermal and mechanical integrity.

Why Choose IC DRAM 32GBIT PAR 556WFBGA?

The MT53E512M64D2HJ-046 AUT:B positions itself as a high-capacity, high-bandwidth LPDDR4X memory device with automotive-grade qualification and a broad operating temperature range. Its combination of 32 Gbit density, 4266 Mb/s per-pin data rate, and programmable latency/burst features makes it suitable for designers needing predictable performance and thermal management features like an on-chip temperature sensor.

This device is appropriate for engineers and procurement teams specifying compact BGA memory for automotive and embedded high-throughput applications that require AEC-Q100 qualification, low-voltage operation, and flexible memory timing options backed by documented device specifications.

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