MT53E512M64D2HJ-046 WT:B

The MT53E512M64D2HJ-046 WT:B is a 32 Gbit volatile DRAM device implemented in a mobile LPDDR4/LPDDR4X SDRAM architecture. It uses a 512M x 64 memory organization with a parallel memory interface and is offered in a 556-ball W/TFBGA package (12.4 mm × 12.4 mm).

Designed for systems that require high-bandwidth, low-voltage DRAM, this device delivers 2133 MHz clock operation (4266 Mb/s data rate per pin) along with low-voltage supply options and features to support efficient power and refresh management.

Key Features

• Core and I/O voltages — Supports multiple supply rails: VDD1 = 1.70–1.95 V (core), VDD2 = 1.06–1.17 V, and selectable VDDQ = 0.57–0.65 V or 1.06–1.17 V.
• High-bandwidth operation — Clock rate 2133 MHz with a per-pin data rate of 4266 Mb/s; architecture supports 16n prefetch and programmable burst lengths (BL = 16, 32).
• Memory organization — 32 Gbit total capacity arranged as 512M × 64 (4 channels × 16 I/O) for parallel channel operation.
• Performance timing — Write cycle time (word page) 18 ns and access time 3.5 ns; speed grade -046 timing parameters defined for RL/WL and DBI options.
• Power and low-power modes — Ultra-low-voltage core and I/O supplies, clock-stop capability, and programmable output drive strength to optimize power vs. performance.
• Refresh and reliability features — Directed per-bank refresh for concurrent bank operation, partial-array self refresh (PASR), programmable VSS (ODT) termination, and an on-chip temperature sensor to control self-refresh rate.
• Package and thermal — 556-ball TFBGA package (12.4 mm × 12.4 mm, Ø0.24 SMD), operating temperature range −25°C to +85°C (WT option).

Typical Applications

• Mobile and handheld devices — Low-voltage operation and high per-pin data rate suit compact systems requiring high bandwidth and tight power budgets.
• Embedded memory subsystems — Parallel 512M × 64 organization and banked architecture support concurrent transactions in embedded compute modules.
• High-performance modules — Programmable latencies, burst lengths, and selectable drive strength enable tuning for module-level memory performance.

Unique Advantages

• Low-voltage operation: Multiple VDD options (including VDD2 = 1.06–1.17 V and VDDQ low-voltage option) reduce core and I/O power consumption where supported.
• High sustained bandwidth: 2133 MHz clock with 4266 Mb/s per-pin data rate and 16n prefetch for high-throughput memory channels.
• Fine-grain refresh control: Directed per-bank refresh and PASR enable concurrent bank operation and reduced refresh overhead for active regions of memory.
• Thermal-aware operation: On-chip temperature sensor can adjust self-refresh behavior to maintain reliability across the specified −25°C to +85°C range.
• Flexible I/O configuration: Selectable VDDQ and programmable output drive strength allow designers to match signaling levels and drive to system requirements.

Why Choose MT53E512M64D2HJ-046 WT:B?

This LPDDR4/LPDDR4X-based 32 Gbit DRAM provides a combination of high per-pin data rate, low-voltage operation, and advanced refresh/power management features that make it suitable for designs needing compact, high-bandwidth memory. Its 512M × 64 organization with 4 channels × 16 I/O supports parallel throughput and concurrent access patterns.

Engineers seeking a memory device that balances performance, configurable signaling, and thermal-aware refresh options will find this part useful for embedded, mobile, and module-level memory subsystems. The device’s package and specified operating range align with assemblies targeting commercial temperature environments.

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