MT53E512M64D2HJ-046 AIT:B

The MT53E512M64D2HJ-046 AIT:B is a 32 Gbit mobile LPDDR4X SDRAM device organized as 512M × 64, supplied in a 556-ball FBGA package. It implements LPDDR4X architecture optimized for compact, high-density memory in automotive and embedded systems.

This device targets applications that require high data throughput, low-voltage operation and automotive-grade reliability, combining raw bandwidth with programmability and advanced refresh and thermal management features.

Key Features

• Core / Architecture  Mobile LPDDR4X SDRAM technology with a memory organization of 512M × 64, providing a total density of 32 Gbit.
• Performance  2133 MHz clock (data rate per pin 4266 Mb/s) delivering per-die bandwidth capability; datasheet notes up to 8.5 GB/s per die ×16 channel.
• Timing  Fast access characteristics with 3.5 ns access time and a word-page write cycle time of 18 ns; device supports programmable READ and WRITE latencies.
• Power  Ultra-low-voltage supply options: VDD1 = 1.70–1.95 V (nominal 1.80 V), VDD2 = 1.06–1.17 V (nominal 1.10 V), and VDDQ options per datasheet; optimized for low-voltage operation.
• Refresh & Memory Management  Directed per-bank refresh and partial-array self refresh (PASR) for concurrent bank operation and flexible power/refresh scheduling; on-chip temperature sensor for adaptive self-refresh control.
• Package  556-ball FBGA package in a compact 12.4 mm × 12.4 mm footprint (556-TFBGA / 556-WFBGA variants referenced).
• Reliability & Qualification  AEC-Q100 qualified with an operating temperature range of −40°C to +95°C (TC), suitable for automotive-grade system requirements.

Typical Applications

• Automotive Systems  Automotive-grade LPDDR4X memory for in-vehicle electronics requiring high density and AEC-Q100 qualification.
• Embedded & Mobile Platforms  Compact, low-voltage memory for mobile and embedded designs that use LPDDR4X architecture and require high data throughput.
• High-Bandwidth Embedded Compute  Memory subsystem for compute or graphics sub-systems in embedded platforms that benefit from the device's high per-pin data rate and programmable latencies.

Unique Advantages

• Automotive-Grade Qualification: AEC-Q100 qualification and −40°C to +95°C operating range provide the traceable reliability required for automotive deployments.
• High Data Throughput: 2133 MHz clock with 4266 Mb/s per pin (datasheet rating) enables substantial bandwidth for demanding embedded workloads.
• Low-Voltage Operation: Support for low-voltage VDD2 (1.06–1.17 V) and VDDQ options reduces power consumption in constrained systems.
• Flexible Memory Management: Directed per-bank refresh, PASR and on-chip temperature sensing allow finer control over refresh and power behavior in multi-bank designs.
• Compact, High-Density Package: 556-ball FBGA in a 12.4 mm × 12.4 mm footprint supports high-density integration in space-constrained PCBs.
• Programmability: Selectable READ/WRITE latencies and burst lengths enable designers to tune performance and timing to system requirements.

Why Choose MT53E512M64D2HJ-046 AIT:B?

This Micron LPDDR4X device combines 32 Gbit density with LPDDR4X low-voltage architecture, programmable timing and advanced refresh/thermal features, making it a solid choice where bandwidth, configurability and automotive-grade reliability are required. The device’s AEC-Q100 qualification and extended temperature range align it to automotive and rugged embedded system needs.

Designers building compact, high-throughput memory subsystems will find the MT53E512M64D2HJ-046 AIT:B suitable for systems that require tight integration, low-voltage operation and flexibility in timing and refresh strategies, while benefiting from vendor-backed datasheet detail and qualification.

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