MT53E512M64D2HJ-046 AIT:B TR

The MT53E512M64D2HJ-046 AIT:B TR is a 32 Gbit LPDDR4X/LPDDR4 SDRAM device organized as 512M × 64 with a parallel memory interface. It delivers high-bandwidth, low-voltage embedded DRAM functionality in a 556-ball FBGA package targeted at automotive and embedded applications that require robust operating temperature and qualification.

Key value comes from its 2133 MHz clocking (4266 Mb/s data rate per pin), low-voltage operation, and automotive AEC‑Q100 qualification—providing a balance of performance, power efficiency, and system-level reliability for demanding designs.

Key Features

• Memory Core & Organization 32 Gbit DRAM organized as 512M × 64 (4 channels × 16 I/O); 16n prefetch architecture with 8 internal banks per channel for concurrent operation.
• Speed & Timing Speed grade -046 supports a 2133 MHz clock (4266 Mb/s data rate per pin); WRITE latency set A = 18 and READ latency values shown at 36/40 (DBI disabled/enabled). Access time listed at 3.5 ns and write cycle time (word page) at 18 ns.
• Low-Voltage Operation Ultra-low-voltage supplies per datasheet: VDD1 = 1.70–1.95 V; VDD2 = 1.06–1.17 V; VDDQ = 0.57–0.65 V or 1.06–1.17 V (options supported).
• Reliability & Power Management Directed per-bank refresh, partial-array self-refresh (PASR), on-chip temperature sensor for self-refresh control, and programmable ODT termination to aid system reliability and power efficiency.
• Programmatic Flexibility Programmable READ/WRITE latencies, selectable output drive strength, and on-the-fly burst length selection (BL = 16, 32) for tuning performance to system needs.
• Package & Thermal Supplied in a 556-ball FBGA package (12.4 mm × 12.4 mm); operating temperature range −40°C to +95°C (TC) and AEC‑Q100 qualification for automotive-grade use.
• Interface Support Parallel LPDDR4X/LPDDR4 interface with bidirectional/differential data strobe per byte lane and single-data-rate CMD/ADR entry.

Typical Applications

• Automotive systems — Infotainment, driver‑assistance and other in-vehicle subsystems that require AEC‑Q100 qualified, wide-temperature memory.
• Embedded computing — High-bandwidth memory for SOCs and processors in embedded platforms where low-voltage operation and compact packaging matter.
• Mobile and handheld devices — LPDDR4X/LPDDR4 memory for designs that need high data rates per pin with configurable latency and burst behavior.

Unique Advantages

• High per-pin data throughput — 4266 Mb/s per pin (2133 MHz clock) enables demanding bandwidth requirements without changing die count.
• Automotive-grade qualification — AEC‑Q100 qualification and −40°C to +95°C operating range support deployment in temperature-stressed automotive applications.
• Low-voltage efficiency — Multiple ultra-low-voltage supply options (VDD1/VDD2/VDDQ) reduce power draw while preserving performance.
• System-level reliability features — On-chip temperature sensor, PASR, and directed per-bank refresh help maintain data integrity and predictable refresh behavior.
• Compact, serviceable package — 556-ball FBGA (12.4 × 12.4 mm) provides high density in a compact footprint for space-constrained boards.

Why Choose MT53E512M64D2HJ-046 AIT:B TR?

The MT53E512M64D2HJ-046 AIT:B TR positions itself as a high-bandwidth, low-voltage LPDDR4X/LPDDR4 DRAM solution with automotive-grade qualification and thermal range suitable for robust embedded and in-vehicle designs. Its combination of programmable latencies, per-bank refresh, and on-chip thermal management enables designers to balance performance, power, and reliability.

Designed and manufactured by Micron Technology, Inc., this 32 Gbit device is appropriate for customers seeking scalable, tested memory building blocks that integrate into compact PCB layouts while meeting automotive qualification requirements.

Request a quote or submit an inquiry for pricing and availability of MT53E512M64D2HJ-046 AIT:B TR to receive detailed lead-time and ordering information tailored to your project.