MT53E512M64D2HJ-046 WT:B TR

The MT53E512M64D2HJ-046 WT:B TR is a 32 Gbit volatile DRAM device implemented as LPDDR4/LPDDR4X mobile SDRAM in a 556-ball WFBGA package (12.4 × 12.4 mm). It implements a 512M × 64 memory organization with a parallel memory interface and is specified for mobile LPDDR4 systems requiring high-density memory.

Designed for low-voltage operation and high data throughput, the device provides programmable latencies, banked refresh capabilities and on-die power-management features to support compact, power-conscious system designs that operate across an industrial temperature window.

Key Features

• Core / Architecture – LPDDR4/LPDDR4X SDRAM architecture with 16n prefetch DDR and multiple internal banks (8 internal banks per channel) to support concurrent operation.
• Memory Organization – 32 Gbit total capacity arranged as 512M × 64; device configuration reflects multi-die packaging options (D2).
• Performance – Clock rate 2133 MHz (data rate per pin 4266 Mb/s) with up to 8.5 GB/s per die ×16 channel throughput capability noted in the datasheet.
• Power – Ultra-low-voltage supplies documented in the datasheet: VDD1 = 1.70–1.95 V (nominal 1.80 V), VDD2 = 1.06–1.17 V (nominal 1.10 V), VDDQ options 0.57–0.65 V or 1.06–1.17 V.
• Timing and Latency – Write cycle time (word page) 18 ns; programmable READ and WRITE latencies (RL/WL) and selectable burst lengths (BL = 16, 32) for flexible timing trade-offs.
• Power and Thermal Management – On-chip temperature sensor, partial-array self refresh (PASR) and directed per-bank refresh to optimize refresh and self-refresh behavior.
• Interface and Signal Features – Parallel memory interface with single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane, and selectable output drive strength (DS).
• Package & Temperature – 556-ball WFBGA package (12.4 × 12.4 mm); operating temperature range −25 °C to +85 °C (WT option).
• System Options – Programmable VSS (ODT) termination, programmable and on-the-fly burst lengths, clock-stop capability and DBI/DBI-enabled read/write latency options documented for the -046 speed grade.

Typical Applications

• Mobile memory subsystems – High-density LPDDR4/LPDDR4X memory for mobile-oriented designs that require parallel LPDDR4 memory integration.
• Embedded memory in compact systems – Use where a 32 Gbit volatile memory footprint in a 12.4 × 12.4 mm WFBGA package is required.
• High-throughput data buffers – Applications leveraging the 2133 MHz clock rate and 4266 Mb/s per-pin data rate for sustained data transfer.

Unique Advantages

• High-density 32 Gbit integration: 512M × 64 organization in a 556-ball WFBGA (12.4 × 12.4 mm) minimizes board area for large volatile memory requirements.
• Low-voltage operation: Supports VDD2 = 1.06–1.17 V and VDDQ low-voltage options to reduce core and I/O power consumption consistent with mobile LPDDR4 requirements.
• High data rate capability: 2133 MHz clock (4266 Mb/s per pin) enables high throughput for bandwidth-sensitive designs.
• Flexible timing and burst control: Programmable RL/WL and selectable burst lengths (BL = 16, 32) allow timing optimization for system trade-offs between latency and throughput.
• Built-in power and refresh controls: On-chip temperature sensor, partial-array self-refresh and directed per-bank refresh provide finer control of refresh behavior and self-refresh power.
• Package and thermal rating: Rated for −25 °C to +85 °C operation in a 556-WFBGA package suitable for compact system integration.

Why Choose MT53E512M64D2HJ-046 WT:B TR?

The MT53E512M64D2HJ-046 WT:B TR positions itself as a high-density, mobile LPDDR4/LPDDR4X SDRAM device that combines low-voltage operation, high per-pin data rates and flexible timing features. Its 512M × 64 organization and 32 Gbit capacity in a compact 556-WFBGA package make it suitable for designs that require substantial volatile memory without a large footprint.

With on-die power-management features, programmable latencies and bank-level refresh controls, the device supports designers seeking to balance throughput, latency and power across a variety of compact LPDDR4-based systems operating from −25 °C to +85 °C.

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