MT53E512M64D2NW-046 WT:B TR

The MT53E512M64D2NW-046 WT:B TR is a 32 Gbit LPDDR4/LPDDR4X DRAM device in a 432-VFBGA (15x15) package. It implements LPDDR4X/LPDDR4 SDRAM architecture and provides high-density, low-voltage memory suitable for mobile LPDDR4 applications.

Designed for systems requiring dense, programmable DRAM with low-voltage operation and advanced power-management features, this device targets designs where integration, configurability and controlled power budgets are important.

Key Features

• Memory Architecture  LPDDR4X/LPDDR4 SDRAM with 16n prefetch DDR architecture and 8 internal banks per channel to support concurrent bank operation.
• Performance (Speed Grade -046)  Speed grade -046 supports a clock rate of 2133 MHz and a data rate of 4266 Mb/s per pin as specified for the -046 grade.
• High Bandwidth  Up to 8.5 GB/s per die for a x16 channel (as documented), enabling high-throughput data paths per die/channel.
• Ultra-Low-Voltage Power  Supports multi-rail operation with specified ranges: VDD1 = 1.70–1.95 V, VDD2 = 1.06–1.17 V, and VDDQ = 0.57–0.65 V (or 1.06–1.17 V) to reduce core and I/O power.
• Programmability and Timing  Programmable READ and WRITE latencies (RL/WL), on-the-fly selectable burst lengths (BL = 16, 32), and selectable output drive strength (DS).
• Power Management and Reliability  Features include directed per-bank refresh for concurrent operation, partial-array self refresh (PASR), on-chip temperature sensor for self-refresh control, and clock-stop capability.
• Package  432-VFBGA package (15x15) providing high I/O density in a compact footprint.
• Operating Temperature  Operating temperature option WT specified as −25°C to +85°C for this ordering variant.

Unique Advantages

• Low-voltage operation: The defined VDD1/VDD2/VDDQ ranges support reduced core and I/O power consumption for power-sensitive designs.
• High per-pin data rate: 4266 Mb/s per pin (speed grade -046) enables high-throughput memory channels where bandwidth is required.
• Flexible timing and bursts: Programmable RL/WL and selectable burst lengths allow designers to tune performance versus latency for target workloads.
• Advanced power features: Directed per-bank refresh, PASR and an on-chip temperature sensor help optimize refresh and self-refresh behavior for efficiency and thermal management.
• Compact, high-density packaging: The 432-ball VFBGA (15x15) package provides dense I/O in a compact footprint for space-constrained systems.

Why Choose IC DRAM 32GBIT 432VFBGA?

The MT53E512M64D2NW-046 WT:B TR positions itself as a high-density LPDDR4/LPDDR4X memory option that combines low-voltage operation, programmable timing, and advanced power-management features. Its documented speed grade and per-pin data rates make it suitable for designs that require predictable, high-bandwidth memory behavior within a compact 432-VFBGA package and a −25°C to +85°C operating range.

This device is appropriate for engineers specifying mobile LPDDR4-class DRAM where integration density, configurable performance parameters and power control features are important for system-level optimization and long-term robustness.

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