MT53E512M64D2RR-046 WT:B TR

The MT53E512M64D2RR-046 WT:B TR is a 32 Gbit LPDDR4 / LPDDR4X SDRAM device provided in a 556-ball WFBGA package (12.4 × 12.4 mm). It implements a 512M × 64 memory organization with a parallel memory interface and is based on LPDDR4 mobile SDRAM architecture.

Designed for mobile LPDDR4 applications, the device delivers high data-rate operation (2133 MHz clock, 4266 Mb/s data rate per pin) and includes power-management and timing programmability intended for systems that require high-bandwidth, low-voltage DRAM.

Key Features

• Core and Architecture  16n prefetch DDR architecture with 8 internal banks per channel to support concurrent operation and efficient command scheduling.
• Memory Organization  32 Gbit total density arranged as 512M × 64 (device configuration D2 indicates two dies in package for this part number).
• High-Speed Operation  Clock rate 2133 MHz (data rate per pin 4266 Mb/s) with speed grade -046 and WRITE/READ latency programmability.
• Voltage Options  Multiple nominal supply options documented: VDD1 = 1.70–1.95 V (1.80 V nominal), VDD2 = 1.06–1.17 V (1.10 V nominal), VDDQ = 0.57–0.65 V (0.60 V nominal) or VDDQ = 1.06–1.17 V (1.10 V nominal).
• Timing and Burst Control  Programmable READ and WRITE latencies (RL/WL) and on-the-fly selectable burst lengths (BL = 16, 32).
• Power and Refresh  Directed per-bank refresh for concurrent bank operation, partial-array self refresh (PASR), on‑chip temperature sensor to control self refresh rates, and clock‑stop capability.
• Signal and I/O Features  Bidirectional/differential data strobe per byte lane, single-ended CK and DQS support, selectable output drive strength (DS), and programmable VSS (ODT) termination.
• Package and Environmental  556-ball WFBGA package (12.4 × 12.4 mm); operating temperature option WT specified as −25 °C to +85 °C.

Typical Applications

• Mobile devices  High-bandwidth system memory in mobile LPDDR4 applications where low-voltage operation and compact package size are required.
• Portable electronics  Memory for handheld and portable systems that benefit from programmable timing, burst control, and power-management features.
• Embedded and multi-channel memory subsystems  Use in multi-channel or multi-die designs requiring parallel LPDDR4 memory organization and concurrent bank operation.

Unique Advantages

• High data throughput:  4266 Mb/s per pin data rate and 2133 MHz clock support provide substantial bandwidth for demanding memory tasks.
• Flexible timing and burst configuration:  Programmable RL/WL and selectable burst lengths (BL = 16, 32) enable tuning for target system latency and throughput.
• Advanced power-management:  Directed per-bank refresh, PASR, on‑chip temperature sensing, and clock-stop capability allow optimized power usage in dynamic workloads.
• Low-voltage operation:  Multiple nominal supply rail options (VDD1, VDD2, VDDQ) support ultra-low-voltage core and I/O operation common to LPDDR4/LPDDR4X architectures.
• Compact WFBGA package:  556-ball WFBGA (12.4 × 12.4 mm) provides a small footprint for space-constrained system designs.
• Concurrent bank operation:  Eight internal banks per channel and directed per-bank refresh enable efficient command scheduling and parallel access.

Why Choose IC DRAM 32GBIT PAR 556WFBGA?

The MT53E512M64D2RR-046 WT:B TR positions itself as a high-bandwidth LPDDR4 memory device that combines programmable timing, advanced power management, and a compact 556-ball WFBGA package. Its documented supply voltage options, 2133 MHz clock rate, and 4266 Mb/s per-pin capability make it suitable for systems that require mobile LPDDR4 memory characteristics.

This device is well suited to engineers designing mobile and portable electronics or embedded memory subsystems that require configurable latency, burst behavior, and power-optimized refresh strategies, while maintaining a small PCB footprint and defined temperature operating option.

Request a quote or submit an inquiry to receive pricing and availability information for the MT53E512M64D2RR-046 WT:B TR.