MT53E512M64D4HJ-046 AIT:D TR
| Part Description |
IC DRAM 32GBIT PAR 556WFBGA |
|---|---|
| Quantity | 969 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 17 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 556-WFBGA (12.4x12.4) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C | Write Cycle Time Word Page | N/A | Packaging | 556-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | N/A | HTS Code | N/A |
Overview of MT53E512M64D4HJ-046 AIT:D TR – IC DRAM 32GBIT PAR 556WFBGA
The MT53E512M64D4HJ-046 AIT:D TR is a 32 Gbit volatile DRAM device implemented in mobile LPDDR4/LPDDR4X SDRAM architecture with a parallel memory interface and a 512M × 64 organization. It delivers high-bandwidth memory operation at a 2.133 GHz clock rate (2133 MHz, 4266 Mb/s data rate per pin) in a compact 556-ball FBGA package.
Designed for environments requiring extended temperature range and automotive qualification, this device provides a combination of performance, low-voltage operation and thermal resilience suitable for automotive and high-reliability embedded applications.
Key Features
- Core & Architecture 16n prefetch DDR architecture with up to 8 internal banks per channel for concurrent operation and flexible command scheduling.
- Memory & Performance 32 Gbit capacity in a 512M × 64 organization, supporting a 2133 MHz clock (4266 Mb/s data rate per pin) and programmable READ/WRITE latencies and burst lengths (BL = 16, 32).
- Power Ultra-low-voltage power supply options as specified: VDD1 = 1.70–1.95 V, VDD2 = 1.06–1.17 V, VDDQ = 0.57–0.65 V (or 1.06–1.17 V), enabling reduced core and I/O power consumption.
- Temperature & Qualification Operating temperature range −40 °C to +95 °C and AEC-Q100 qualification for automotive-grade deployment.
- Reliability & System Features Directed per-bank refresh, partial-array self refresh (PASR), on-chip temperature sensor for self-refresh control, selectable output drive strength and programmable ODT (VSS) termination to support robust system operation.
- Package 556-ball TFBGA/WFBGA package (12.4 × 12.4 mm) for high-density mounting in space-constrained systems.
- Interface & Timing Single-data-rate CMD/ADR, bidirectional/differential data strobe per byte lane, single-ended CK and DQS support, and clock-stop capability. Example timing: speed grade -046 at 2133 MHz with read latencies documented in the device specification.
Typical Applications
- Automotive Systems Suitable for automotive electronics that require AEC-Q100-qualified, extended-temperature memory for advanced in-vehicle compute and storage tasks.
- Mobile and Handheld Devices Mobile LPDDR4 architecture provides the bandwidth and low-voltage operation appropriate for high-performance mobile designs.
- High-Reliability Embedded Platforms Compact 556-ball FBGA packaging and on-chip reliability features support embedded controllers and vision processors operating across wide temperature ranges.
Unique Advantages
- High-Density 32 Gbit Capacity: Provides substantial memory footprint in a single die package (512M × 64) to support memory-intense workloads without multi-die complexity.
- High Data-Rate Operation: 2133 MHz clocking (4266 Mb/s per pin) delivers the bandwidth required for demanding real-time and multimedia applications.
- Automotive-Grade Qualification: AEC-Q100 qualification combined with −40 °C to +95 °C operating range enables deployment in temperature-challenging automotive environments.
- Low-Voltage Efficiency: Multiple low-voltage supply options (VDD1/VDD2/VDDQ ranges) reduce power consumption for energy-sensitive system designs.
- System-Level Reliability Features: Directed per-bank refresh, PASR and on-chip temperature sensing help maintain data integrity and optimize refresh behavior under varying conditions.
- Compact, High-Density Packaging: 556-ball FBGA (12.4 × 12.4 mm) minimizes PCB area while delivering high I/O density for complex board layouts.
Why Choose MT53E512M64D4HJ-046 AIT:D TR?
The MT53E512M64D4HJ-046 AIT:D TR balances high-bandwidth LPDDR4/LPDDR4X performance with low-voltage operation and automotive-grade robustness. Its 32 Gbit density, programmable timing, and system-level reliability features make it suitable for designs that demand both throughput and resilience across extended temperature ranges.
Manufactured by Micron Technology Inc., this device is positioned for engineers building automotive and embedded platforms that need a high-density, qualified DRAM solution in a compact FBGA package.
Request a quote or submit an inquiry for pricing and availability for the MT53E512M64D4HJ-046 AIT:D TR to evaluate it for your next design.
