MT53E512M64D4HJ-046 AUT:D TR
| Part Description |
IC DRAM 32GBIT PAR 556WFBGA |
|---|---|
| Quantity | 545 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 556-WFBGA (12.4x12.4) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 125°C | Write Cycle Time Word Page | N/A | Packaging | 556-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | N/A | HTS Code | N/A |
Overview of MT53E512M64D4HJ-046 AUT:D TR – IC DRAM 32GBIT PAR 556WFBGA
The MT53E512M64D4HJ-046 AUT:D TR is a 32 Gbit volatile DRAM device based on LPDDR4X mobile SDRAM architecture with a parallel memory interface and a 512M x 64 organization. It delivers a 2.133 GHz clock rate (4266 Mb/s data rate per pin for speed grade -046) in a 556-ball FBGA package designed for automotive-grade applications.
Targeted for automotive and mobile embedded systems, the device provides configurable latencies, low-voltage operation, and a broad operating temperature range to support high-performance memory requirements in demanding environments.
Key Features
- Memory Core & Architecture 32 Gbit LPDDR4X SDRAM with 512M x 64 organization and 16n prefetch DDR architecture; 4 channels of 16 I/O for the 512M x 64 option.
- Performance Speed grade -046: 2133 MHz clock rate with 4266 Mb/s data rate per pin; programmable READ and WRITE latencies (RL/WL) and selectable burst lengths (BL = 16, 32).
- Power Domains & Voltage Ultra-low-voltage core and I/O supplies. Documented supply ranges include VDD1 = 1.70–1.95 V (1.80 V nominal), VDD2 = 1.06–1.17 V (1.10 V nominal) and VDDQ options 0.57–0.65 V (0.60 V nominal) or 1.06–1.17 V (1.10 V nominal).
- Reliability & Automotive Qualification AEC-Q100 qualification and an operating temperature range of -40°C to 125°C suitable for automotive-grade environments.
- Refresh & Power Management Directed per-bank refresh, partial-array self refresh (PASR), on-chip temperature sensor to control self-refresh rate, and clock-stop capability for power efficiency.
- I/O & Signal Features Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane, programmable output drive strength (DS), selectable on-die termination (VSS/ODT), and support for single-ended CK and DQS.
- Package 556-ball FBGA package (556-TFBGA / 556-WFBGA) with a 12.4 × 12.4 mm footprint to support compact board integration.
- Timing Examples (Speed Grade -046) Write latency (Set A / Set B): 18 / 34; Read latency (DBI disabled / enabled): 36 / 40.
Typical Applications
- Automotive Electronic Systems — Automotive-grade LPDDR4X memory for electronic control units and embedded modules requiring wide temperature operation and AEC-Q100 qualification.
- Infotainment & Telematics — High-bandwidth, low-voltage memory for multimedia processing and system-level storage in vehicle subsystems.
- Mobile and Embedded Compute — Parallel LPDDR4X memory for compact compute modules and high-performance embedded controllers where low voltage and configurable latency are required.
Unique Advantages
- Automotive-Grade Qualification: AEC-Q100 qualification and -40°C to 125°C operating range provide documented suitability for automotive environments.
- High Data Throughput: 2133 MHz clock (4266 Mb/s per pin) speed grade -046 enables high-bandwidth operation for demanding memory workloads.
- Low-Voltage Operation: Multiple low-voltage supply domains (VDD1, VDD2, VDDQ) reduce overall power consumption while supporting LPDDR4X operation.
- Flexible Timing & Power Management: Programmable RL/WL, selectable burst lengths, per-bank refresh and on-chip temperature sensing allow designers to tune performance and power trade-offs.
- Compact Automotive Package: 556-ball FBGA (12.4 × 12.4 mm) offers a compact form factor for space-constrained automotive and embedded designs.
Why Choose IC DRAM 32GBIT PAR 556WFBGA?
The MT53E512M64D4HJ-046 AUT:D TR combines LPDDR4X mobile SDRAM performance with automotive-grade qualification and a compact 556-ball FBGA footprint. Its combination of high data rate, configurable latencies, and low-voltage supply options makes it suitable for designers building robust, high-bandwidth memory subsystems for automotive and embedded applications.
For designs requiring documented automotive qualification, wide temperature operation, and flexible timing/power control, this device offers a balance of performance, integration, and reliability backed by the device’s technical specification set.
Request a quote or contact sales to discuss availability, lead times, and integration details for the MT53E512M64D4HJ-046 AUT:D TR.
