MT53E512M64D4HJ-046 AAT:D TR

The MT53E512M64D4HJ-046 AAT:D TR is a 32 Gbit DRAM device implemented in Mobile LPDDR4/LPDDR4X SDRAM technology. It uses a parallel memory interface with a 512M x 64 organization and is supplied in a 556-ball WFBGA package (12.4 × 12.4 mm).

This device targets designs that require high-density, high-bandwidth mobile LPDDR4 memory with low-voltage supply options and integrated device-level features for memory management and power efficiency.

Key Features

• Technology / Architecture  Mobile LPDDR4/LPDDR4X SDRAM architecture with 16n prefetch and 8 internal banks per channel for concurrent operation.
• Memory Organization & Capacity  512M × 64 organization delivering 32 Gbit total memory capacity in a multi-die package option.
• Performance  Speed grade -046 supports a 2133 MHz clock rate and 4266 Mb/s data rate per pin (data rate per pin shown in datasheet).
• Low-Voltage Supply Options  Datasheet lists nominal supply ranges including VDD1 = 1.70–1.95 V (1.80 V nominal), VDD2 = 1.06–1.17 V (1.10 V nominal), and VDDQ options of 0.57–0.65 V (0.60 V nominal) or 1.06–1.17 V (1.10 V nominal).
• Latency & Burst Control  Programmable READ and WRITE latencies (RL/WL) and selectable burst lengths (BL = 16, 32) to tune performance for system requirements.
• Refresh & Reliability Features  Directed per-bank refresh for concurrent bank operation, partial-array self refresh (PASR), and an on-chip temperature sensor to manage self-refresh behavior.
• I/O & Termination  Bidirectional/differential data strobe per byte lane, selectable output drive strength (DS), programmable VSS (ODT) termination, and single-data-rate CMD/ADR entry.
• Package  556-ball TFBGA/WFBGA package option (12.4 × 12.4 mm) suitable for high-density mounting; package marking option HJ corresponds to this 556-ball package.
• Additional System Features  Support for clock-stop capability and single-ended CK and DQS support as documented in the datasheet.

Typical Applications

• Mobile devices  Mobile LPDDR4/LPDDR4X architecture is intended for handheld and mobile memory subsystems that require high density and low-voltage operation.
• High-bandwidth memory subsystems  High per-pin data rate (4266 Mb/s) and multi-bank architecture support bandwidth-intensive tasks such as multimedia and graphics buffering.
• Low-voltage embedded designs  Multiple low-voltage supply options and power-management features make it suitable for embedded systems that prioritize power efficiency.

Unique Advantages

• High-density in a compact package: 32 Gbit memory capacity implemented in a 556-ball WFBGA (12.4 × 12.4 mm) package for space-constrained systems.
• High per-pin throughput: Speed grade -046 provides a 2133 MHz clock and 4266 Mb/s per-pin data rate to meet demanding bandwidth requirements.
• Flexible voltage options: Multiple VDD1/VDD2/VDDQ ranges documented for LPDDR4X/LPDDR4 to match system power domains and efficiency targets.
• Software-tunable performance: Programmable RL/WL and burst-length options allow system designers to optimize latency and throughput trade-offs.
• System-level power management: Directed per-bank refresh, PASR and an on-chip temperature sensor help reduce active and standby power while maintaining data integrity.
• Integrated I/O control: Selectable output drive strength and programmable ODT provide signal integrity and termination flexibility for high-speed interfaces.

Why Choose IC DRAM 32GBIT PAR 556WFBGA?

The MT53E512M64D4HJ-046 AAT:D TR combines high density, mobile LPDDR4/LPDDR4X architecture and high per-pin data rates in a compact 556-ball WFBGA package, making it well suited for designs that require substantial memory capacity and bandwidth within a small footprint. Its programmable latency, burst control and power-management features allow designers to tune performance and power consumption to application needs.

This Micron DRAM device is appropriate for customers building mobile and embedded systems that require low-voltage operation, high throughput and integrated device-level features for refresh and thermal management. The documented voltage ranges, speed grade and package information support informed system integration and long-term design planning.

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