MT53E512M64D2RR-046 WT:B

The MT53E512M64D2RR-046 WT:B is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4/LPDDR4X SDRAM architecture with a parallel memory interface. It provides a high-density 512M x 64 organization in a 556-ball WFBGA package (12.4 mm × 12.4 mm), targeting designs that require high data throughput, compact footprint, and low-voltage operation.

Key value comes from high data rates (2.133 GHz clock, 4266 Mb/s per pin), low-voltage core/I/O options, and package-level density that supports system memory requirements in space-constrained designs operating across a -25°C to 85°C temperature range.

Key Features

• Core / Architecture Mobile LPDDR4/LPDDR4X SDRAM architecture with 16n prefetch DDR and multiple internal banks for concurrent operation.
• Memory Density & Organization 32 Gbit total capacity organized as 512M × 64 (4 channels × 16 I/O per channel option), enabling high-density system memory in a single package.
• Performance 2.133 GHz clock frequency with a 4266 Mb/s data rate per pin and an access time of 3.5 ns; programmable READ/WRITE latencies and on-the-fly burst lengths (BL = 16, 32).
• Power Supports ultra-low-voltage core and I/O supplies. Documented supply ranges include VDD1 = 1.70–1.95 V, VDD2 = 1.06–1.17 V, and VDDQ options of 0.57–0.65 V or 1.06–1.17 V; the product data lists VDD = 1.06–1.17 V.
• Timing & Throughput Write cycle time (word page) specified at 18 ns with speed grade -046 timing (468 ps cycle at RL = 36/40); per-die throughput noted in the datasheet (up to 8.5 GB/s per die x16 channel).
• Reliability & Power Management Features include directed per-bank refresh, partial-array self refresh (PASR), on-chip temperature sensor for self-refresh control, selectable output drive strength, and programmable ODT termination.
• Package & Thermal 556-ball WFBGA package (12.4 mm × 12.4 mm) with operating temperature range of -25°C to +85°C (WT marking).

Typical Applications

• Mobile and portable devices — High-density LPDDR4 memory for systems that require low-voltage operation and compact footprint.
• High-bandwidth embedded platforms — Suitable where parallel LPDDR4 memory with multi-gigabit-per-second per-pin data rates is required.
• Compact system memory modules — Used in designs needing 32 Gbit DRAM capacity in a 556-ball WFBGA package with industrial temperature support.

Unique Advantages

• High-density single-package memory: 32 Gbit capacity in a 512M × 64 organization reduces board-level component count while providing substantial system memory.
• High data-rate operation: 2.133 GHz clock and 4266 Mb/s per-pin data rate support demanding throughput requirements.
• Low-voltage operation options: LPDDR4/LPDDR4X ultra-low-voltage core and I/O rails support reduced power budgets and multiple VDDQ options for flexible system design.
• Advanced memory controls: Programmable latencies, burst lengths, per-bank refresh, and on-chip temperature sensing enable optimized performance and power trade-offs.
• Robust package and thermal range: 556-WFBGA (12.4 mm × 12.4 mm) package and -25°C to +85°C operating range accommodate space-constrained designs with moderate temperature requirements.

Why Choose MT53E512M64D2RR-046 WT:B?

The MT53E512M64D2RR-046 WT:B positions itself as a high-density LPDDR4/LPDDR4X DRAM solution that balances throughput, low-voltage operation, and compact packaging for space-limited systems. Its 32 Gbit capacity, 4266 Mb/s per-pin data rate, and advanced power-management features make it suitable for designs that require substantial on-package memory bandwidth under constrained power and size budgets.

This device is ideal for engineers and procurement teams specifying parallel LPDDR4 memory with defined timing (-046 speed grade), a 556-ball WFBGA footprint, and an operating range of -25°C to +85°C. The documented power-rail options, programmable timings, and package density support scalable designs and long-term integration into embedded platforms.

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