MT53E512M64D4HJ-046 AIT:D

The MT53E512M64D4HJ-046 AIT:D is a 32 Gbit volatile DRAM device implemented in mobile LPDDR4 architecture with a parallel memory interface and a 512M x 64 organization. It delivers high-bandwidth, low-voltage operation in a compact 556-ball WFBGA package and is qualified to AEC-Q100 for automotive use.

Designed for systems requiring sustained data throughput and robustness across temperature extremes, this device targets automotive and mobile embedded designs where compact package size, low-voltage operation, and automotive qualification are key decision factors.

Key Features

• Core & architecture  16n prefetch DDR architecture with internal bank structure supporting concurrent operation; programmable READ/WRITE latencies and selectable burst lengths (BL = 16, 32).
• Memory organization & interface  32 Gbit DRAM arranged as 512M x 64 with a parallel memory interface and bidirectional/differential data strobe per byte lane.
• Performance  Rated clock frequency 2.133 GHz (speed grade -046) with a data rate per pin of 4266 Mb/s and up to 8.5 GB/s per die ×16 channel (per datasheet specifications).
• Low-voltage operation  Voltage supply specified at 1.06 V–1.17 V; the product data and datasheet reference ultra-low-voltage core and I/O power supplies to support reduced power consumption.
• System reliability & maintenance  AEC-Q100 qualification, on-chip temperature sensor, partial-array self refresh (PASR), and directed per-bank refresh for improved refresh scheduling and reliability.
• Package & thermal  556-TFBGA (556-WFBGA) package, 12.4 × 12.4 mm footprint, and operating temperature range of −40°C to +95°C suitable for demanding thermal environments.
• Other device features  Programmable output drive strength, programmable VSS (ODT) termination, clock-stop capability, and RoHS-compliant packaging (per datasheet).

Typical Applications

• Automotive systems  Automotive infotainment, advanced driver assistance, and other vehicle systems requiring automotive-qualified, high-bandwidth DRAM.
• Mobile & embedded platforms  Mobile and compact embedded designs that need LPDDR4-class bandwidth and low-voltage operation in a small-footprint package.
• High-throughput sensor and processing modules  Modules that require sustained data rates and concurrent bank operation for sensor data buffering and processing.

Unique Advantages

• Automotive-qualified reliability: AEC-Q100 qualification and extended operating temperature (−40°C to +95°C) support deployment in automotive environments.
• High data throughput: 2.133 GHz clock rate and 4266 Mb/s per pin deliver the bandwidth needed for demanding data flows.
• Low-voltage operation: 1.06–1.17 V supply supports reduced power consumption for mobile and power-sensitive designs.
• Compact WFBGA footprint: 556-ball TFBGA (12.4 × 12.4 mm) enables dense board-level integration where space is limited.
• On-die reliability features: On-chip temperature sensor, PASR and directed per-bank refresh improve system stability and refresh management.
• Flexible timing & drive control: Programmable read/write latencies, burst lengths, and selectable drive strength help tune performance for target systems.

Why Choose IC DRAM 32GBIT PAR 556WFBGA?

This MT53E512M64D4HJ-046 AIT:D device combines LPDDR4 mobile architecture with automotive qualification to offer a compact, low-voltage DRAM solution for high-bandwidth embedded applications. Its 512M × 64 organization, 2.133 GHz clocking, and advanced on-die features provide a balance of performance, thermal tolerance, and system-level reliability.

The device is suitable for designers targeting automotive and mobile embedded systems that require sustained throughput, compact packaging, and AEC-Q100 qualification. Its specification set supports integration into designs where robust operation across temperature and predictable memory behavior are essential.

Request a quote or submit an RFQ to obtain pricing, lead-time, and availability information for the MT53E512M64D4HJ-046 AIT:D.