MT53E512M64D4HJ-046 AAT:D

The MT53E512M64D4HJ-046 AAT:D is a 32 Gbit mobile LPDDR4 SDRAM device organized as 512M x 64 and delivered in a 556-ball WFBGA package (12.4 × 12.4 mm). It implements LPDDR4/LPDDR4X unified architecture and a parallel memory interface suitable for high-density memory subsystems.

Designed for mobile and memory-dense applications, this device combines high data-rate operation (speed grade -046), low-voltage core/I/O options and advanced power-management features to support compact, high-throughput designs.

Key Features

• Memory Capacity & Organization 32 Gbit total density organized as 512M × 64 (4 channels × 16 I/O), enabling high-density memory implementations.
• Technology & Architecture LPDDR4/LPDDR4X SDRAM with 16n prefetch DDR architecture and 8 internal banks per channel for concurrent operation.
• High Data Rate / Timing Speed grade -046: 2133 MHz clock rate (4266 Mb/s data rate per pin). Example latencies for this grade include WRITE latency Set A = 18, Set B = 34 and READ latencies (DBI disabled/enabled) = 36/40.
• Low-Voltage Power Options Ultra-low-voltage core and I/O supplies with documented ranges: VDD1 = 1.70–1.95 V (1.80 V nominal); VDD2 = 1.06–1.17 V (1.10 V nominal); VDDQ = 0.57–0.65 V (0.60 V nominal) or VDDQ = 1.06–1.17 V (1.10 V nominal).
• Interface & Command Features Parallel memory interface with single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane, programmable READ/WRITE latencies and selectable burst lengths (BL = 16, 32).
• Throughput Up to 8.5 GB/s per die for a x16 channel configuration (per datasheet specifications for supported modes).
• Power Management & Reliability On-chip temperature sensor, partial-array self refresh (PASR), directed per-bank refresh, selectable output drive strength, programmable VSS (ODT) termination and clock-stop capability.
• Package 556-ball TFBGA / WFBGA package (12.4 × 12.4 mm) optimized for compact board integration; RoHS-compliant, “green” packaging.

Typical Applications

• Mobile devices — High-density LPDDR4 memory for mobile form-factor systems requiring compact, low-voltage DRAM.
• Memory-dense modules — Use in designs that require large-capacity parallel DRAM in a compact WFBGA footprint.
• Multi-channel memory architectures — Features such as 4 channels × 16 I/O and high per-pin data rates support multi-channel, high-throughput memory subsystems.

Unique Advantages

• High-density capacity: 32 Gbit (512M × 64) organization minimizes board area for large memory requirements.
• High data-rate capability: Speed grade -046 supports 4266 Mb/s per pin, enabling substantial per-channel throughput.
• Low-voltage operation: Multiple VDD/VDDQ options reduce power consumption and support low-power system designs.
• Advanced power controls: On-chip temperature sensing, PASR and directed per-bank refresh help optimize power and refresh scheduling.
• Compact package: 556-ball WFBGA (12.4 × 12.4 mm) provides a standardized, space-efficient footprint for high-density assemblies.

Why Choose IC DRAM 32GBIT PAR 556WFBGA?

The MT53E512M64D4HJ-046 AAT:D delivers a combination of high density, low-voltage operation and high per-pin data rates in a compact 556-ball WFBGA package. Its LPDDR4/LPDDR4X unified architecture and advanced power-management features make it suitable for designs that demand efficient, high-throughput memory in constrained form factors.

This device is appropriate for engineers specifying high-capacity LPDDR4 memory where documented timing, power options and package form factor are critical to system integration and performance.

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