MT53E512M64D2NZ-46 WT:B

The MT53E512M64D2NZ-46 WT:B is a 32 Gbit volatile DRAM device implemented in mobile LPDDR4 SDRAM technology. It is organized as 512M x 64 with a parallel memory interface and is supplied in a 376-ball WFBGA (14 × 14 mm) package.

Designed for applications that require high data rate and low-voltage operation, this device delivers 2.133 GHz clock operation (4266 Mb/s data rate per pin) with programmable latencies and power management features to balance performance and efficiency.

Key Features

• Core and Architecture  Mobile LPDDR4 SDRAM architecture with 16n prefetch and 8 internal banks per channel for concurrent operation.
• Density and Organization  32 Gbit total capacity, organized as 512M x 64 (two-die package option D2 as indicated in part number series).
• High Data Rate  Clock frequency 2.133 GHz with a data rate per pin of 4266 Mb/s (speed grade -046).
• Timing  Access time 3.5 ns and write cycle time (word page) 18 ns; supports programmable READ and WRITE latencies (RL/WL) and selectable burst lengths (BL = 16, 32).
• Power  Ultra-low-voltage operation with VDD2 (core) / VDDQ options; device voltage range listed as 1.06 V to 1.17 V in the product specifications.
• On-chip Power and Reliability Features  On-chip temperature sensor, partial-array self refresh (PASR), directed per-bank refresh for concurrent bank operation, programmable VSS (ODT) termination, and clock-stop capability (as described in datasheet).
• Package and Mounting  376-ball WFBGA package (14 mm × 14 mm × 0.71 mm, Ø0.24 SMD) optimized for compact, high-density board designs.
• Operating Range  Temperature range −25°C to +85°C (TC) as specified for this part number.

Typical Applications

• Mobile devices and handheld systems  Low-voltage LPDDR4 memory for high-bandwidth, compact mobile designs where power efficiency and density are important.
• High-bandwidth embedded systems  Memory for designs that require multi-bank concurrency and programmable latencies to optimize throughput and responsiveness.
• Consumer electronics  Dense DRAM in a compact WFBGA package for space-constrained consumer products needing sustained data rates.

Unique Advantages

• High sustained throughput: 2.133 GHz clock and 4266 Mb/s per-pin data rate (speed grade -046) enable high-bandwidth data handling.
• Compact, high-density package: 32 Gbit capacity in a 376-ball WFBGA (14×14 mm) keeps board area low while providing large memory capacity.
• Low-voltage operation: Core/I/O voltage options and a specified voltage range of 1.06 V–1.17 V reduce power consumption for mobile and battery-powered designs.
• Flexible timing and burst control: Programmable RL/WL and selectable burst lengths (16, 32) allow designers to tune performance to application needs.
• Built-in power-management features: On-chip temperature sensor, partial-array self refresh, and directed per-bank refresh help manage power and maintain operation across varying conditions.

Why Choose MT53E512M64D2NZ-46 WT:B?

This LPDDR4 device positions itself for designs that require a combination of high data rate, compact packaging, and low-voltage operation. Its 32 Gbit capacity, 512M x 64 organization, and programmable timing options make it suitable for systems that demand large memory bandwidth within tight board space and power budgets.

Engineers targeting mobile and high-bandwidth embedded applications will find the MT53E512M64D2NZ-46 WT:B offers technical features—such as per-bank refresh and on-chip temperature sensing—that support efficient power management and reliable operation across the specified temperature range.

Request a quote or submit an inquiry to obtain pricing and availability for MT53E512M64D2NZ-46 WT:B and evaluate it for your design requirements.