MT53E512M64D2NW-046 WT:B

The MT53E512M64D2NW-046 WT:B is a 32 Gbit LPDDR4/LPDDR4X DRAM device in a 432-ball VFBGA (15 × 15 mm) package from Micron Technology Inc. It implements LPDDR4X/LPDDR4 SDRAM architecture and is targeted at mobile and compact embedded applications requiring high-density, high-bandwidth memory.

This device delivers the -046 speed grade (2133 MHz clock / 4266 Mb/s data rate per pin) with LPDDR4/LPDDR4X features such as ultra-low-voltage operation and programmable memory timing for performance and power flexibility.

Key Features

• Memory Architecture — LPDDR4X/LPDDR4 SDRAM with 16n prefetch DDR architecture and support for programmable READ/WRITE latencies and burst lengths (BL = 16, 32).
• Density — 32 Gbit total memory capacity provided in the 432-VFBGA package.
• Performance (Speed Grade -046) — 2133 MHz clock rate with 4266 Mb/s data rate per pin (data rate per pin shown for the -046 speed grade).
• Power and Voltage Options — Ultra-low-voltage core and I/O supplies with specified ranges: VDD1 = 1.70–1.95 V (1.80 V nominal); VDD2 = 1.06–1.17 V (1.10 V nominal); VDDQ = 0.57–0.65 V (0.60 V nominal) or 1.06–1.17 V (1.10 V nominal).
• Internal Organization — Architecture includes 8 internal banks per channel and support for directed per-bank refresh to aid concurrent bank operation and command scheduling.
• Throughput — Device documentation lists up to 8.5 GB/s per die (x16 channel) performance capability.
• Power Management & Reliability — On-chip temperature sensor for self-refresh control, partial-array self refresh (PASR), selectable output drive strength (DS), and programmable VSS (ODT) termination.
• Package & Temperature — 432-VFBGA (15 × 15 mm) package; operating temperature range indicated by WT option: –25°C to +85°C.
• Packaging Compliance — Datasheet lists RoHS-compliant, “green” packaging.

Typical Applications

• Mobile devices — LPDDR4/LPDDR4X architecture and ultra-low-voltage operation make it suitable for memory subsystems in mobile and handheld platforms.
• Compact embedded systems — High density in a 15 × 15 mm VFBGA package supports space-constrained embedded designs requiring significant DRAM capacity.
• High-bandwidth memory modules — The -046 speed grade (4266 Mb/s per pin) and multi-bank architecture support designs needing sustained data throughput.

Unique Advantages

• High-density 32 Gbit capacity: Provides large memory capacity in a single-package solution, reducing board-level memory stack complexity.
• High data-rate capability: -046 speed grade delivers 2133 MHz clocking and 4266 Mb/s per pin for high-bandwidth operation.
• Low-voltage operation: Multiple nominal voltage options (VDD1, VDD2, VDDQ) support power-optimized system designs.
• Compact 432-VFBGA package: 15 × 15 mm footprint enables integration into small form-factor devices.
• Programmable timing and refresh features: RL/WL programmability, burst length options, directed per-bank refresh, and an on-chip temperature sensor enable flexible performance and power trade-offs.
• Temperature-rated WT option: –25°C to +85°C operating range suitable for a broad set of commercial and industrial-adjacent deployments.

Why Choose IC DRAM 32GBIT 432VFBGA?

The MT53E512M64D2NW-046 WT:B offers a high-density, high-bandwidth LPDDR4/LPDDR4X memory option in a compact 432-ball VFBGA package. Its -046 speed grade and low-voltage supply options enable designers to balance throughput and power for mobile and space-constrained embedded systems.

This Micron LPDDR4/LPDDR4X device is suited to designs requiring scalable memory capacity, programmable timing controls, and package-level integration that preserves board area while delivering substantial DRAM performance and power management features.

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