MT53E512M64D2HJ-046 AUT:B TR

IC DRAM 32GBIT PAR 556WFBGA
Part Description

IC DRAM 32GBIT PAR 556WFBGA

Quantity 403 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time4 Weeks
Datasheet

Specifications & Environmental

Device Package556-WFBGA (12.4x12.4)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4X
Memory Size32 GbitAccess Time3.5 nsGradeAutomotive
Clock Frequency2.133 GHzVoltage1.06V ~ 1.17VMemory TypeVolatile
Operating Temperature-40°C ~ 125°C (TC)Write Cycle Time Word Page18 nsPackaging556-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization512M x 64
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNN/AHTS CodeN/A

Overview of MT53E512M64D2HJ-046 AUT:B TR – IC DRAM 32GBIT PAR 556WFBGA

The MT53E512M64D2HJ-046 AUT:B TR is a high-density volatile DRAM device implemented in the LPDDR4X/LPDDR4 SDRAM architecture. It provides a 32 Gbit capacity in a 512M x 64 organization with a parallel memory interface optimized for high-bandwidth embedded systems.

Designed for automotive-grade applications, this device combines 2133 MHz clock operation (4266 Mb/s data rate per pin), low-voltage operation, and a compact 556-ball WFBGA package to deliver performance, power efficiency, and board-level integration for demanding environments.

Key Features

  • Core / Architecture LPDDR4X/LPDDR4 SDRAM architecture with 16n prefetch and up to 8 internal banks per channel for concurrent operation.
  • Memory Density & Organization 32 Gbit total capacity implemented as 512M x 64 (dual-die configuration D2) to support high-density memory designs.
  • Performance 2.133 GHz clock rate (2133 MHz) with a data rate per pin of 4266 Mb/s and up to 8.5 GB/s per die x16 channel as specified in the device family information.
  • Timing Fast access characteristics including an access time of 3.5 ns and write cycle time (word page) of 18 ns; programmable READ/WRITE latencies and selectable burst lengths (BL = 16, 32).
  • Power & Voltage Ultra-low-voltage cores and I/O options: VDD2 = 1.06–1.17 V (1.10 V nominal) and VDDQ options including 0.57–0.65 V (0.60 V nominal) or 1.06–1.17 V, enabling lower power operation.
  • System & Reliability Features Directed per-bank refresh, on-chip temperature sensor, partial-array self refresh (PASR), selectable output drive strength, and programmable ODT (VSS) termination.
  • Interface & IO Parallel memory interface with single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane, and support for single-ended CK and DQS.
  • Qualification & Temperature AEC-Q100 qualified with an operating temperature range of −40°C to 125°C (TC), targeting robust operation in temperature-critical applications.
  • Package 556-ball TFBGA / WFBGA package (556-TFBGA, 12.4 × 12.4 mm) for compact, high-density board integration.

Typical Applications

  • Automotive systems — Memory subsystem for automotive electronic modules where AEC-Q100 qualification and extended temperature operation are required.
  • High-bandwidth embedded processors — Local DRAM for processors and SoCs requiring multi-gigabit-per-second data throughput per pin.
  • Infotainment and telematics — Storage for frame buffers, multimedia processing, and data buffering in vehicle infotainment and telematics modules.

Unique Advantages

  • High-density 32 Gbit capacity: Reduces the need for multiple devices by delivering 512M × 64 organization in a single package.
  • High data-rate operation: 2133 MHz clock and 4266 Mb/s per-pin data rate support demanding bandwidth requirements.
  • Low-voltage operation: VDD2 range of 1.06–1.17 V (and VDDQ low-voltage options) helps minimize power consumption in battery-sensitive or thermally constrained systems.
  • Automotive qualification: AEC-Q100 qualification and −40°C to 125°C (TC) operating range enable use in temperature- and reliability-sensitive automotive electronics.
  • Compact 556-ball package: 12.4 × 12.4 mm WFBGA footprint supports high-density PCB layouts and integration into space-constrained modules.
  • System-friendly features: On-chip temperature sensor, directed per-bank refresh, and programmable latencies simplify memory management and thermal-aware operation.

Why Choose MT53E512M64D2HJ-046 AUT:B TR?

The MT53E512M64D2HJ-046 AUT:B TR positions itself as a high-density, high-bandwidth LPDDR4X/LPDDR4 memory device tailored for automotive and other demanding embedded systems. Its combination of 32 Gbit capacity, 4266 Mb/s per-pin data rates, low-voltage operation, and AEC-Q100 qualification addresses designs that require performance, efficiency, and extended temperature operation.

This device is appropriate for engineers designing compact, high-throughput memory subsystems—especially where automotive-grade qualification and thermal robustness are priorities. The Micron LPDDR4X product features and package options provide a verified integration path for long-term, high-reliability applications.

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