MT53E512M64D2HJ-046 AAT:B TR

The MT53E512M64D2HJ-046 AAT:B TR is a 32 Gbit volatile DRAM device implemented in mobile LPDDR4X SDRAM technology. It features a 512M × 64 memory organization, a parallel memory interface and a 556-ball W/TFBGA package for compact board-level integration. Designed for applications that require high data throughput and extended temperature operation, the device combines high-speed operation with automotive-grade qualification.

Key Features

• Memory Architecture — 32 Gbit density with 512M × 64 organization and LPDDR4X SDRAM core architecture for high-density mobile memory integration.
• Performance — 2.133 GHz clock frequency (data rate per pin 4266 Mb/s) and an access time of 3.5 ns; write cycle time (word page) of 18 ns supports high-throughput data transfers.
• Low-Voltage Operation — Core/I/O supply specified at 1.06 V to 1.17 V, supporting low-power system design.
• Programmability & Burst Modes — Programmable READ/WRITE latencies (RL/WL) and selectable burst lengths (BL = 16, 32) for flexible performance tuning.
• Reliability & Memory Management — Directed per-bank refresh and partial-array self refresh (PASR) enable concurrent bank operation and power-efficient retention modes.
• System Features — On-chip temperature sensor, programmable output drive strength, programmable ODT termination and clock-stop capability for system-level control and monitoring.
• Package — 556-ball W/TFBGA package (12.4 × 12.4 mm) offered in a 556-TFBGA case for dense board integration.
• Qualification & Temperature — AEC-Q100 qualification and operating temperature range of −40°C to 105°C (TC) for extended-temperature and automotive use cases.
• Throughput per Channel — Device supports up to 8.5 GB/s per die (x16 channel), enabling high-bandwidth subsystem designs.
• Standards & Compliance — LPDDR4X/LPDDR4 unified product features, including single-data-rate CMD/ADR entry and bidirectional/differential data strobe per byte lane.

Typical Applications

• Automotive systems — Automotive-grade LPDDR4X memory for vehicle electronic control units and infotainment systems that require extended temperature range and AEC-Q100 qualification.
• Mobile and handheld devices — High-density LPDDR4X memory for mobile platforms requiring compact package options and high data-rate per pin operation.
• Industrial embedded systems — Extended-temperature memory for industrial equipment and embedded controllers operating across wide temperature ranges.

Unique Advantages

• Automotive-grade qualification: AEC-Q100 qualification and −40°C to 105°C operating range support deployment in temperature-critical automotive environments.
• High data throughput: 2.133 GHz clock and 4266 Mb/s data rate per pin enable high-performance data transfer for bandwidth-sensitive applications.
• Low-voltage core/I/O: 1.06 V–1.17 V supply reduces power consumption and simplifies low-power system designs.
• Flexible timing control: Programmable RL/WL and selectable burst lengths (16/32) allow designers to tune latency and throughput to system needs.
• System-level robustness: Directed per-bank refresh, partial-array self refresh and an on-chip temperature sensor improve reliability and power management under varying workloads.
• Compact high-density packaging: 556-ball W/TFBGA (12.4 × 12.4 mm) package provides a space-efficient footprint for dense board layouts.

Why Choose MT53E512M64D2HJ-046 AAT:B TR?

The MT53E512M64D2HJ-046 AAT:B TR delivers high-density LPDDR4X memory with automotive qualification and an extended operating temperature range, making it suitable for designs that require both bandwidth and environmental robustness. Its combination of low-voltage operation, programmable timing, and system-level features (on-chip temperature sensor, PASR, directed refresh) provides designers with flexibility to optimize power, performance and reliability.

This device is well suited to customers building automotive, mobile and industrial embedded systems that need scalable, high-throughput memory in a compact 556-ball FBGA package, backed by documented LPDDR4X feature support.

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