MT53E512M64D4NK-046 WT:D

The MT53E512M64D4NK-046 WT:D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 (LPDDR4X/LPDDR4 unified product) SDRAM architecture. It delivers high-density memory in a 512M x 64 organization with a 2.133 GHz clock rate and is supplied in a 366-ball WFBGA (15 × 15 mm) package.

Designed for mobile and compact high-bandwidth systems, the device emphasizes low-voltage operation and programmable memory timing features to support performance-sensitive embedded designs within an extended temperature window.

Key Features

• Memory Core & Architecture 32 Gbit LPDDR4/LPDDR4X SDRAM in a 512M × 64 organization with 16n prefetch DDR architecture and 8 internal banks per channel for concurrent operation.
• High-Speed Operation Speed grade -046 supports a 2133 MHz clock (data rate per pin 4266 Mb/s) with programmable READ and WRITE latencies (RL/WL).
• Programmable Burst and Timing Supports on-the-fly burst lengths (BL = 16, 32) and selectable output drive strength for flexible timing and signal integrity tuning.
• Power and Voltage Ultra-low-voltage core and I/O supplies with nominal 1.10 V supply for VDD2; multiple VDD/VDDQ options are supported in the unified LPDDR4X/LPDDR4 product family.
• Refresh and Reliability Features Directed per-bank refresh and partial-array self refresh (PASR) for more efficient refresh scheduling and lower standby power; on-chip temperature sensor to control self-refresh rate.
• Throughput Up to 8.5 GB/s per die (x16 channel) performance capability as defined in the device family specification.
• Package and Thermal 366-ball WFBGA package (15 × 15 mm) suitable for compact board-level integration; specified operating temperature range of -30°C to +85°C (TC).
• Additional Interface Options Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane, and selectable on-die termination (programmable VSS/ODT).

Typical Applications

• Mobile devices — High-density, low-voltage memory for LPDDR4-based mobile platforms requiring compact packages and high data-rate per pin.
• Portable consumer electronics — Provides bandwidth and capacity for handheld and portable systems that demand small-footprint WFBGA packaging.
• Embedded systems — Suitable for compact embedded designs that require programmable latencies, directed refresh, and thermal-aware self-refresh control.

Unique Advantages

• High-density memory in a compact package: 32 Gbit capacity in a 366-WFBGA (15 × 15 mm) package enables high-capacity designs with space constraints.
• Low-voltage operation: Ultra-low-voltage core and I/O supplies with a 1.10 V supply option reduce power consumption for battery-operated and thermally constrained systems.
• High throughput at 2133 MHz: 2.133 GHz clock (4266 Mb/s per pin) supports high-bandwidth workloads while offering programmable RL/WL for timing optimization.
• Flexible refresh and power management: Directed per-bank refresh, PASR, and an on-chip temperature sensor help optimize refresh behavior and reduce standby power.
• Configurable transfer characteristics: Selectable burst lengths, drive strength, and programmable ODT allow designers to tune performance and signal integrity for their board designs.

Why Choose IC DRAM 32GBIT 2.133GHZ 366WFBGA?

The MT53E512M64D4NK-046 WT:D combines high density, mobile LPDDR4 architecture, and high data-rate operation in a compact 366-WFBGA footprint. Its low-voltage operation, programmable timing, and refresh features make it suitable for designs that require balanced performance and power efficiency within constrained board space and thermal envelopes.

This device is ideal for engineers specifying high-capacity memory in mobile, portable, or embedded platforms that benefit from configurable latency, robust refresh control, and thermal-aware self-refresh support. The LPDDR4/LPDDR4X unified feature set provides design flexibility across a range of low-voltage memory implementations.

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