MT53E512M64D4NK-053 WT:D TR

The MT53E512M64D4NK-053 WT:D TR is a 32 Gbit volatile DRAM device based on mobile LPDDR4 SDRAM architecture. It is organized as 512M x 64, operates at a clock frequency of 1.866 GHz, and targets compact, high-bandwidth memory applications that require low-voltage operation and dense WFBGA packaging.

This device delivers high-density memory in a 366-ball WFBGA package (15 × 15 mm) and is specified for operation from –30°C to 85°C, with a nominal supply voltage of 1.1 V.

Key Features

• Memory Architecture Mobile LPDDR4 SDRAM organized as 512M × 64 for a total density of 32 Gbit, delivering a wide data path suitable for high-throughput designs.
• High Clock Rate Clock frequency of 1.866 GHz to support high-speed data transfers in memory-intensive applications.
• Low-Voltage Operation Nominal supply voltage of 1.1 V; the family supports ultra-low-voltage core and I/O power supplies as described in the datasheet.
• DDR Architecture and Performance Features 16n prefetch DDR architecture, programmable READ/WRITE latencies and burst lengths (BL = 16, 32) enable flexible memory timing and data throughput optimization.
• Concurrency and Refresh Multiple internal banks and directed per-bank refresh support concurrent bank operation and simplified command scheduling (family-level feature).
• On-Chip Management Includes on-chip temperature sensor and partial-array self refresh (PASR) mechanisms to manage refresh behavior and self-refresh rates (datasheet specified).
• Package and Thermal Range 366-WFBGA package (15 × 15 mm) with an operating temperature range of –30°C to 85°C (TC) suitable for controlled-temperature embedded systems.
• Programmable I/O and Drive Selectable output drive strength and programmable termination options (ODT) are supported at the device/family level for signal integrity tuning.
• RoHS Packaging Datasheet indicates RoHS-compliant, “green” packaging for the LPDDR4/LPDDR4X family.

Typical Applications

• Mobile and Handheld Devices High-density LPDDR4 memory for compact systems that require high data rates and low-voltage operation.
• Embedded Vision and Multimedia High-bandwidth memory interface suitable for buffering video frames and image processing data streams.
• Networking and Edge Compute Local DRAM for edge compute modules that need dense, fast volatile memory in a small package.

Unique Advantages

• High-density, compact footprint: 32 Gbit capacity in a 366-WFBGA 15 × 15 mm package minimizes board area for high-memory designs.
• High-speed operation: 1.866 GHz clock frequency supports elevated data throughput requirements without increasing device count.
• Low-voltage design: 1.1 V nominal supply supports power-sensitive applications and aligns with mobile LPDDR4 family power schemes.
• Flexible timing and control: Programmable latencies, burst lengths, and selectable drive strength enable system-level timing optimization and signal integrity tuning.
• Runtime power management: On-chip temperature sensing and partial-array self refresh capabilities help manage power and refresh behavior under varying thermal conditions.

Why Choose IC DRAM 32GBIT 1.866GHZ 366WFBGA?

The MT53E512M64D4NK-053 WT:D TR positions itself as a high-density LPDDR4 DRAM solution that combines 32 Gbit capacity, a 512M × 64 organization, and a 1.866 GHz clock in a compact 366-WFBGA package. Its low-voltage operation and family-level features—such as programmable timing, banked refresh, and on-chip thermal management—make it suitable for designs that need dense, high-speed volatile memory with configurable performance and power characteristics.

This device is well suited for embedded and portable systems, multimedia buffering, and edge compute platforms where board space, power envelope, and memory bandwidth must be balanced. The datasheet-provided capabilities support integration and tuning for a range of system-level requirements.

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