MT53E512M64D4NW-046 WT:E
| Part Description |
IC DRAM 32GBIT 2.133GHZ 432VFBGA |
|---|---|
| Quantity | 1,387 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53E512M64D4NW-046 WT:E – IC DRAM 32Gbit 2.133GHz 432‑VFBGA
The MT53E512M64D4NW-046 WT:E is a 32 Gbit LPDDR4X/LPDDR4 SDRAM device organized as 512M x 64 in a 432‑ball very‑thin FBGA (15×15 mm) package. It delivers high data throughput at a 2.133 GHz clock rate (4266 Mb/s data rate per pin) for space‑constrained, low‑voltage mobile memory subsystems.
Built for high‑bandwidth, low‑power applications, this device combines LPDDR4 family architecture with features that support concurrent bank operation, programmable latencies, and on‑die power and thermal management.
Key Features
- Memory Architecture 32 Gbit capacity organized as 512M x 64 with 16n prefetch and 8 internal banks per channel to enable concurrent operation.
- High Data Rate Clock rate 2.133 GHz with a data rate per pin of 4266 Mb/s (speed grade -046).
- LPDDR4X/LPDDR4 Family Unified LPDDR4X/LPDDR4 SDRAM product with support for LPDDR4 settings and features such as programmable READ/WRITE latencies and burst lengths (BL = 16, 32).
- Low‑Voltage Operation Ultra‑low‑voltage core and I/O supplies with nominal VDD2 ~1.10 V and VDDQ options shown in the product marking; product spec lists 1.1 V supply.
- Power and Thermal Management On‑chip temperature sensor, partial‑array self refresh (PASR), and clock‑stop capability to manage power and thermal profile.
- Refresh and Reliability Directed per‑bank refresh for improved command scheduling and concurrent bank operation; programmable on‑die termination (VSS ODT) and selectable output drive strength.
- Interface and Timing Single‑data‑rate command/address entry, bidirectional/differential data strobe per byte lane, and support for programmable RL/WL values.
- Package and Temperature 432‑VFBGA package (15×15 mm) with operating temperature range listed as −30°C to +85°C (TC).
- Performance Scaling Architecture supports up to 8.5 GB/s per die (x16 channel) as documented for LPDDR4 devices in this family.
Typical Applications
- Mobile and Portable Devices Low‑voltage LPDDR4X/LPDDR4 architecture and compact VFBGA package suit high‑bandwidth memory subsystems in space‑constrained mobile platforms.
- Compact System Memory Modules High density (32 Gbit) in a 15×15 mm package enables dense memory integration for small form‑factor modules.
- High‑Bandwidth Embedded Subsystems 2.133 GHz clocking and concurrent bank operation support designs that require sustained data throughput and flexible refresh scheduling.
Unique Advantages
- High‑Density 32 Gbit Capacity: 512M x 64 organization provides substantial memory in a single die for compact designs.
- Up to 4266 Mb/s per Pin: -046 speed grade delivers 2.133 GHz clocking for high data transfer rates.
- Low‑Voltage, Power‑Aware Design: Ultra‑low voltage supplies and on‑die temperature sensing enable power‑efficient operation and dynamic thermal management.
- Compact 432‑VFBGA Package: 15×15 mm VFBGA footprint facilitates integration into space‑limited PCBs and modules.
- Flexible Timing and Refresh: Programmable READ/WRITE latencies, selectable burst lengths, and directed per‑bank refresh simplify memory scheduling and optimize concurrency.
- On‑Die Tuning Options: Selectable output drive strength and programmable ODT support signal integrity tuning for varied board and system conditions.
Why Choose IC DRAM 32GBIT 2.133GHZ 432VFBGA?
The MT53E512M64D4NW-046 WT:E offers a combination of high density, high data rate, and low‑voltage operation in a compact 432‑VFBGA package, making it suitable for designs that require significant memory bandwidth in a small footprint. Its LPDDR4X/LPDDR4 feature set—programmable latencies, directed per‑bank refresh, on‑die thermal sensing, and selectable drive/ODT options—helps engineers tune performance, power, and reliability to system needs.
This device is well suited to customers building space‑constrained, high‑throughput memory subsystems who require verifiable LPDDR4 family features and documented speed‑grade performance across the specified operating temperature range.
For pricing, lead time, or to request a quotation for MT53E512M64D4NW-046 WT:E, please submit a request or contact sales to receive detailed ordering information and availability.