MT53E512M64D4NW-046 WT:E TR

The MT53E512M64D4NW-046 WT:E TR is a 32 Gbit volatile DRAM device implemented in LPDDR4/LPDDR4X architecture. It is organized as 512M x 64 and is optimized for mobile LPDDR4 applications that require high bandwidth in a compact 432-ball VFBGA (15 × 15 mm) package.

This device delivers a 2.133 GHz clock rate (data rate per pin 4,266 Mb/s) with ultra-low-voltage core and I/O supplies, providing a balance of high performance and low-power operation for space-constrained memory subsystems.

Key Features

• Core & power Ultra-low-voltage supplies with VDD2 nominal 1.10 V (VDD2 = 1.06–1.17 V) and VDDQ options per LPDDR4X/LPDDR4 guidance; supports low-voltage operation identified by marking "E".
• Performance 2.133 GHz clock frequency (speed grade -046) with a data rate per pin of 4,266 Mb/s providing high-bandwidth DRAM throughput.
• Memory architecture 16n prefetch DDR architecture with multiple internal banks (8 internal banks per channel) and programmable READ/WRITE latencies and burst lengths (BL = 16, 32).
• Low-power & management On-chip temperature sensor, partial-array self refresh (PASR), and clock-stop capability to aid power management and self-refresh control.
• Data integrity & timing Bidirectional/differential data strobe per byte lane, selectable output drive strength, and programmable ODT (VSS) termination options for board-level signaling control.
• Package & thermal 432-ball VFBGA (15 × 15 mm) package; operating temperature range specified as −30 °C to +85 °C (TC).

Typical Applications

• Mobile and handheld devices — High-bandwidth, low-voltage DRAM for compact mobile memory subsystems where board space and power are constrained.
• Embedded memory subsystems — High-density volatile memory for embedded platforms requiring 32 Gbit capacity in a small-package footprint.
• High-throughput data buffering — Use where programmable latencies and burst lengths are needed to match variable data traffic patterns.

Unique Advantages

• High per-pin data rate: 4,266 Mb/s per pin (2133 MHz clock) enables high-bandwidth operation in compact form factors.
• Low-voltage operation: Nominal 1.10 V supply (VDD2) and LPDDR4X/LPDDR4 low-voltage options reduce power draw in battery-powered designs.
• Flexible timing and bursting: Programmable READ/WRITE latencies and selectable burst lengths (16, 32) allow tuning for system-level performance and latency requirements.
• Power-management features: On-chip temperature sensing, PASR and clock-stop capability help optimize self-refresh and standby power use.
• Compact package: 432-ball VFBGA (15 × 15 mm) provides 32 Gbit density in a space-efficient footprint for constrained PCBs.

Why Choose IC DRAM 32GBIT 2.133GHZ 432VFBGA?

The MT53E512M64D4NW-046 WT:E TR positions itself as a high-density LPDDR4/LPDDR4X DRAM solution combining 32 Gbit capacity with a 2.133 GHz clock and 4,266 Mb/s per-pin data rate. Its low-voltage supply options, programmable timing, and on-chip power-management features make it suitable for designs that require both bandwidth and energy efficiency in a compact package.

Backed by Micron Technology's LPDDR4/LPDDR4X product family and offered in a 432-ball VFBGA, this part is intended for engineers specifying mobile or embedded memory subsystems where package density, configurable performance, and thermal operating range are key selection criteria.

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