MT53E512M64D4NW-053 WT:E

The MT53E512M64D4NW-053 WT:E is a 32 Gbit volatile DRAM device implemented as mobile LPDDR4 SDRAM in a 432-ball VFBGA (15 × 15 mm) package. It is organized as 512M × 64 and operates with a 1.866 GHz clock frequency and a nominal 1.1 V supply.

Designed for high-density, low-voltage memory applications, this LPDDR4 device provides advanced SDRAM capabilities such as multi-bank architecture, programmable latencies and burst lengths, and on-chip features that support power-efficient system integration.

Key Features

• Memory Core and Organization 32 Gbit DRAM organized as 512M × 64, providing high-density memory in a single package.
• LPDDR4 Mobile SDRAM Technology Mobile LPDDR4 SDRAM architecture with 16n prefetch DDR and multiple internal banks per channel for concurrent operation.
• High-Frequency Operation 1.866 GHz clock frequency for high-throughput memory access.
• Ultra-Low-Voltage Supply Nominal core/I/O operation at 1.1 V supporting reduced power consumption for mobile and low-power designs.
• Advanced Timing and Burst Control Programmable READ/WRITE latencies (RL/WL) and selectable burst lengths (BL = 16, 32) for flexible performance tuning.
• Power and Refresh Management Directed per-bank refresh and partial-array self-refresh (PASR) to optimize power during partial-device retention and concurrent bank access.
• System Reliability and Control On-chip temperature sensor and selectable output drive strength support adaptive behavior and signal integrity management.
• Package and Temperature Range 432-VFBGA (15 × 15 mm) package with an operating temperature range of -30°C to +85°C (TC).

Typical Applications

• Mobile and Handheld Devices Low-voltage LPDDR4 architecture and high density make this device suitable for space-constrained mobile memory subsystems.
• Embedded Computing High-capacity DRAM for embedded systems that require large working memory and programmable latency/burst control.
• Battery-Powered Electronics Ultra-low-voltage core and I/O supplies help reduce overall power draw in battery-operated products.

Unique Advantages

• High Density in a Compact Package: 32 Gbit capacity in a 432-ball VFBGA (15 × 15 mm) reduces board area for high-memory designs.
• Low-Voltage Operation: Nominal 1.1 V supply supports lower power consumption for mobile and energy-sensitive applications.
• Flexible Performance Tuning: Programmable RL/WL and selectable burst lengths enable designers to balance latency and throughput based on system needs.
• Power-Optimized Refresh: Directed per-bank refresh and partial-array self-refresh reduce active power during selective retention and refresh operations.
• Thermal Awareness: On-chip temperature sensing allows adaptive self-refresh control to help manage retention and power under varying thermal conditions.

Why Choose MT53E512M64D4NW-053 WT:E?

The MT53E512M64D4NW-053 WT:E delivers a combination of high-density LPDDR4 memory, low-voltage operation, and package-level integration that fits compact, power-sensitive system designs. Its 512M × 64 organization and 1.866 GHz clock support demanding memory footprints while on-chip features and refresh controls help optimize power and reliability.

This device is appropriate for designers targeting mobile, embedded, or battery-powered products that require scalable memory capacity, configurable timing, and compact package form factor backed by documented LPDDR4/LPDDR4X feature sets.

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