MT53E512M64D4NW-046 IT:E

The MT53E512M64D4NW-046 IT:E is a 32 Gbit volatile DRAM device implemented in LPDDR4/LPDDR4X SDRAM technology. It is organized as 512M x 64 and specified for a 2.133 GHz clock (data rate per pin 4266 Mb/s for the -046 speed grade), delivered in a 432-ball VFBGA (15 × 15 mm) package.

Designed for mobile LPDDR4 applications, the device combines high data-rate operation with ultra-low-voltage supplies and extended temperature capability (−40°C to +95°C) for space-constrained, low-power designs that require sustained bandwidth.

Key Features

• Core / Memory architecture 512M × 64 organization (32 Gbit) with 16n prefetch DDR architecture and 8 internal banks per channel to support concurrent memory operations.
• Performance Speed grade -046: 2.133 GHz clock, 4266 Mb/s data rate per pin; write/read latency options and programmable burst lengths (BL = 16, 32).
• Low-voltage supplies Nominal 1.1 V supply (product specification). Datasheet options include ultra-low-voltage core and I/O supplies (VDD1, VDD2, VDDQ ranges listed in the datasheet).
• Power and refresh control Directed per-bank refresh for concurrent bank operation, partial-array self refresh (PASR), and an on-chip temperature sensor for self-refresh rate control.
• Signal and I/O features Bidirectional/differential data strobe per byte lane, selectable output drive strength (DS), programmable ODT (VSS termination), and clock-stop capability.
• Package and thermal 432-VFBGA (15 × 15 mm) package; operating temperature range −40°C to +95°C (TC).

Typical Applications

• Mobile devices and handsets — LPDDR4 mobile SDRAM technology and low-voltage operation target space- and power-constrained mobile applications.
• High-bandwidth SoC memory — 4266 Mb/s per pin data rate and per-die bandwidth characteristics support systems requiring sustained data throughput.
• Compact, thermally-challenged designs — 432-VFBGA 15×15 package and extended −40°C to +95°C operating range suit dense modules and broader temperature environments.
• Low-power embedded systems — ultra-low-voltage core and I/O supply options and advanced refresh controls help reduce active and retention power.

Unique Advantages

• High data-rate capability: 2.133 GHz clock and 4266 Mb/s per pin (speed grade -046) enable high-throughput memory interfaces.
• Large density in a small footprint: 32 Gbit (512M × 64) implemented in a 432-ball VFBGA (15 × 15 mm) package for compact designs.
• Low-voltage operation: Nominal 1.1 V supply with LPDDR4/LPDDR4X ultra-low-voltage supply options documented in the datasheet to reduce power consumption.
• Flexible memory timing and bursts: Programmable READ/WRITE latencies and selectable burst lengths (BL = 16, 32) enable tuning for target system performance.
• Advanced refresh and power features: Directed per-bank refresh, PASR, and on-chip temperature sensing improve refresh scheduling and retention power management.
• Extended operating temperature: −40°C to +95°C (TC) rating supports a wider range of environmental conditions.

Why Choose IC DRAM 32GBIT 2.133GHZ 432VFBGA?

The MT53E512M64D4NW-046 IT:E from Micron Technology is positioned for designs that require a combination of high bandwidth, low-voltage operation, and a compact BGA footprint. Its LPDDR4/LPDDR4X architecture, programmable timing features, and directed per-bank refresh options make it suitable for systems demanding tunable performance and efficient refresh management.

With a 32 Gbit density in a 15 × 15 mm 432-VFBGA package and an extended −40°C to +95°C operating range, this device is appropriate for engineers specifying space-constrained, thermally variable platforms that need sustained data throughput and low-power operation.

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