MT53E2G32D4DE-046 AAT:A TR
| Part Description |
IC DRAM 64GBIT PAR 200TFBGA |
|---|---|
| Quantity | 1,102 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-TFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | 3.5 ns | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TC) | Write Cycle Time Word Page | 18 ns | Packaging | 200-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | N/A | HTS Code | N/A |
Overview of MT53E2G32D4DE-046 AAT:A TR – 64Gbit Parallel LPDDR4X DRAM (200-TFBGA)
The MT53E2G32D4DE-046 AAT:A TR is a 64 Gbit volatile DRAM device implemented as mobile LPDDR4X SDRAM with a parallel memory interface and a 2G × 32 organization. It is supplied in a 200‑TFBGA (10 × 14.5 mm) package and is qualified to AEC‑Q100 for automotive use.
Designed for systems requiring high clock rates and wide operating temperature, the device supports a 2.133 GHz clock frequency, access time of 3.5 ns, and an operating temperature range of −40 °C to 105 °C (TC).
Key Features
- Core / Memory Architecture Mobile LPDDR4X SDRAM architecture with a 2G × 32 memory organization delivering 64 Gbit total capacity.
- Performance Supports up to 2.133 GHz clock frequency with a typical access time of 3.5 ns and a write cycle time (word page) of 18 ns for responsive memory access.
- Power Operates from a 1.06 V to 1.17 V supply range, consistent with LPDDR4X mobile power rails.
- Interface Parallel memory interface suitable for direct DRAM subsystem integration.
- Package Supplied in a 200‑TFBGA package (10 × 14.5 mm) for compact board-level integration.
- Temperature & Reliability Automotive-grade device with AEC‑Q100 qualification and an operating temperature range of −40 °C to 105 °C (TC).
Typical Applications
- Automotive electronics Use in automotive systems requiring AEC‑Q100 qualification and wide temperature operation.
- Mobile and handheld devices Mobile LPDDR4X architecture and a 1.06–1.17 V supply range make it suitable for power-conscious mobile memory subsystems.
- Embedded memory subsystems Parallel DRAM interface and 64 Gbit capacity support high-density embedded memory designs.
Unique Advantages
- Automotive-qualified design: AEC‑Q100 qualification and −40 °C to 105 °C operating range provide traceable reliability for automotive applications.
- High-capacity memory: 64 Gbit capacity in a 2G × 32 organization enables large memory footprints in a single device.
- High-frequency operation: 2.133 GHz clock support and 3.5 ns access time enable fast data throughput where required.
- Compact package: 200‑TFBGA (10 × 14.5 mm) package balances density and board-level integration.
- Narrow supply range: 1.06 V to 1.17 V operation aligns with mobile LPDDR4X power rails for predictable power budgeting.
Why Choose MT53E2G32D4DE-046 AAT:A TR?
The MT53E2G32D4DE-046 AAT:A TR combines LPDDR4X mobile SDRAM architecture, high clock capability, and automotive-grade qualification to address designs where performance, capacity, and wide-temperature reliability are required. Its 64 Gbit capacity and parallel interface simplify high-density memory integration in compact board footprints.
This device is suited for designers targeting automotive and mobile-oriented systems that require verifiable AEC‑Q100 qualification, predictable power characteristics, and a compact 200‑TFBGA package for system-level integration.
Request a quote or contact sales to discuss pricing, availability, and suitability of MT53E2G32D4DE-046 AAT:A TR for your next design.
