MT53E1G64D8NW-046 WT:E TR

The MT53E1G64D8NW-046 WT:E TR is a 64 Gbit volatile DRAM device implementing mobile LPDDR4 SDRAM technology. It is manufactured by Micron Technology Inc. and presented in an FBGA package format.

With a 1G × 64 organization, a clock frequency up to 2.133 GHz, and a 1.1 V supply, this device addresses designs requiring high-density, high-frequency mobile LPDDR4 memory within the specified operating temperature range.

Key Features

• Memory Technology 
  Mobile LPDDR4 SDRAM architecture for volatile memory applications.
• Density and Organization 
  64 Gbit capacity organized as 1G × 64 to support wide-data-path memory integration.
• Clock Performance 
  Operates at up to 2.133 GHz clock frequency to support high-rate data transfers.
• Supply Voltage 
  Nominal 1.1 V supply compatible with LPDDR4 low-voltage system designs.
• Operating Temperature 
  Rated for −30°C to 85°C (TC) to meet the stated thermal conditions.
• Package 
  FBGA package format as indicated in the product name.

Typical Applications

• Mobile devices 
  Use as high-density LPDDR4 system memory where a 64 Gbit device and 2.133 GHz operation are required.
• High-bandwidth memory subsystems 
  Integration into systems that require wide 64-bit memory organization and high clock rates for throughput.
• Embedded computing 
  Provides volatile DRAM storage for embedded platforms that leverage mobile LPDDR4 technology and the specified operating temperature range.

Unique Advantages

• High memory density: 64 Gbit capacity reduces the need for multiple DRAM devices to reach target system memory.
• High-frequency operation: 2.133 GHz clock capability supports higher data-rate requirements within LPDDR4 specifications.
• Low-voltage operation: 1.1 V supply supports integration into low-voltage LPDDR4 system designs.
• Wide data organization: 1G × 64 arrangement provides a 64-bit data path for efficient bus utilization.
• Specified thermal range: −30°C to 85°C (TC) rating for operation across the documented temperature span.

Why Choose MT53E1G64D8NW-046 WT:E TR?

The MT53E1G64D8NW-046 WT:E TR positions itself as a high-density, high-frequency mobile LPDDR4 DRAM solution from Micron Technology Inc., offering a 64 Gbit capacity in a 1G × 64 organization and operation up to 2.133 GHz at 1.1 V. Its specified operating temperature range and FBGA package format make it suitable for designs that require the stated density and clock performance.

This device is well suited for designers and procurement teams targeting compact, high-capacity LPDDR4 memory solutions for mobile and embedded platforms. Choosing this part supports consistent integration of 64 Gbit LPDDR4 memory while aligning with the documented electrical and thermal characteristics.

Request a quote or contact sales to inquire about pricing, lead times, and availability for the MT53E1G64D8NW-046 WT:E TR.