MT53E1G64D4SQ-046 WT:A

The MT53E1G64D4SQ-046 WT:A is a 64 Gbit volatile memory device implemented as mobile LPDDR4 SDRAM. It provides a 1G × 64 memory organization and operates at a clock frequency of 2.133 GHz with a 1.1 V supply.

This device is targeted at designs that require high-density mobile LPDDR4 memory and operation across a broad temperature range, offering a combination of density, frequency, and low-voltage operation.

Key Features

• Memory Architecture 1G × 64 organization delivering a total memory capacity of 64 Gbit suitable for high-density memory requirements.
• Technology Mobile LPDDR4 SDRAM technology providing standard LPDDR4 behavior for compatible system designs.
• Clock / Performance Rated clock frequency of 2.133 GHz to support high-rate data transfer in supported memory subsystems.
• Power Low-voltage operation at 1.1 V to align with LPDDR4 power domains.
• Operating Temperature Specified operating temperature range of −30°C to 85°C (TC) for use in varied thermal environments.
• Memory Type Volatile DRAM format intended for transient data storage in system memory stacks.
• Package WFBGA package designation indicated in the product name for board-level integration.

Typical Applications

• Mobile devices — LPDDR4 technology and the 1.1 V supply make this device suitable for use in mobile memory subsystems where LPDDR4 is specified.
• Embedded systems — High density (64 Gbit) memory configurations for embedded platforms that require large volatile storage.
• Memory-dense SoC support — Acts as onboard DRAM for system-on-chip designs that require a 1G × 64 LPDDR4 interface and 2.133 GHz operation.

Unique Advantages

• High density 64 Gbit capacity: Reduces the number of memory components needed to reach large volatile storage totals.
• LPDDR4 mobile technology: Aligns with mobile LPDDR4 design requirements for systems using that memory standard.
• 2.133 GHz clock rating: Supports higher-frequency operation for memory subsystems designed to leverage increased throughput.
• Low 1.1 V supply: Enables compatibility with low-voltage memory power domains to help manage system power budgets.
• Wide operating temperature range: Specified −30°C to 85°C (TC) for deployment across a range of thermal conditions.

Why Choose IC DRAM 64GBIT 2.133GHZ WFBGA?

The MT53E1G64D4SQ-046 WT:A positions itself as a high-density LPDDR4 SDRAM option from Micron Technology Inc., combining 64 Gbit capacity with a 1G × 64 organization and a 2.133 GHz clock rating. Its 1.1 V supply and specified temperature range address low-voltage and broad-environment design considerations.

This device is appropriate for designers and procurement teams specifying mobile LPDDR4 memory where large volatile capacity, defined clocking at 2.133 GHz, and a WFBGA package designation are required. Its specification set supports integration into systems that require these explicit LPDDR4 characteristics.

To request a quote or discuss pricing and availability for the MT53E1G64D4SQ-046 WT:A, please contact sales or submit a request for quotation through your preferred procurement channel.