MTFC32GJTED-3F WT
| Part Description |
IC FLASH 256GBIT MMC 169VFBGA |
|---|---|
| Quantity | 698 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 169-VFBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -25°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 169-VFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | MMC | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MTFC32GJTED-3F WT – e•MMC™ 256 Gbit 169-VFBGA
The MTFC32GJTED-3F WT is a non-volatile NAND flash memory device in Micron's e•MMC™ series, providing 256 Gbit of integrated storage in a 169-VFBGA package. It implements a FLASH (NAND) memory architecture organized as 32G × 8 and communicates over an MMC interface.
Designed for systems that require onboard flash storage, this device offers a high-density memory format with a compact 169-VFBGA (14×18) package, a supply voltage range of 2.7 V to 3.6 V, and an operating temperature range of −25 °C to 85 °C.
Key Features
- Core / Memory 256 Gbit FLASH (NAND) memory, organized as 32G × 8 for high-density embedded storage.
- Interface MMC memory interface for host communication and integration into MMC-compatible designs.
- Power Operates from a 2.7 V to 3.6 V supply voltage, supporting common 3 V embedded system power rails.
- Package 169-VFBGA package (14×18) providing a compact footprint for space-constrained assemblies.
- Operating Temperature Specified for operation from −25 °C to 85 °C (TA), suitable for a range of ambient environments.
- Memory Format & Organization FLASH memory format with 32G × 8 organization to simplify capacity planning and integration.
Typical Applications
- Embedded storage systems — Provides non-volatile NAND FLASH storage for systems that require MMC-interface memory integration.
- Consumer and portable devices — Compact 169-VFBGA footprint and 256 Gbit capacity suit space-constrained designs with substantial storage needs.
- Industrial equipment — Supply voltage range and operating temperature specification support deployment in varied ambient conditions.
Unique Advantages
- High-density capacity: 256 Gbit of FLASH memory enables large local storage in a single device, reducing the need for multiple components.
- Standard MMC interface: MMC connectivity simplifies integration into systems that support MMC memory protocols.
- Compact BGA package: 169-VFBGA (14×18) package minimizes PCB area for designs with tight space constraints.
- Flexible power range: Operates across 2.7 V to 3.6 V, aligning with common embedded power domains.
- Broad operating temperature: −25 °C to 85 °C rating supports deployment across a range of ambient temperatures.
Why Choose IC FLASH 256GBIT MMC 169VFBGA?
The MTFC32GJTED-3F WT positions itself as a high-density e•MMC™ FLASH memory solution combining 256 Gbit capacity, MMC interface compatibility, and a compact 169-VFBGA package. Its electrical and thermal specifications make it suitable for embedded designs that require significant local non-volatile storage while maintaining a small PCB footprint.
This device is appropriate for designers and procurement teams specifying integrated NAND FLASH memory for MMC-based systems where capacity, package size, and defined operating voltage and temperature ranges are key selection criteria.
Request a quote or contact sales to discuss availability, pricing, and suitability for your design requirements.
