NAND128W3A0AN6E
| Part Description |
IC FLASH 128MBIT PARALLEL 48TSOP |
|---|---|
| Quantity | 1,891 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | STMicroelectronics |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of NAND128W3A0AN6E – IC FLASH 128MBIT PARALLEL 48TSOP
The NAND128W3A0AN6E is a 128 Mbit non-volatile NAND flash memory organized as 16M × 8 with a parallel (x8) interface in a 48‑TSOP package. It provides block‑oriented NAND storage with features targeted at mass storage and embedded boot applications.
Designed for systems requiring compact, low‑voltage flash storage, the device supports standard NAND operations and offers fast sequential access and power‑up read options to simplify boot and memory download use cases.
Key Features
- Memory Core 128 Mbit NAND flash organized as 16M × 8 with page and block architecture for block erase and page program operations.
- Page and Block Details x8 device page size: 512 bytes + 16 bytes spare; block size: 16K bytes + 512 bytes spare (as specified for x8 devices).
- Performance Sequential access down to 50 ns (min) and random access up to 12 μs (max); typical page program time ~200 μs and typical block erase time ~2 ms.
- Interface Standard NAND interface with multiplexed address/data bus, pinout compatibility across densities and copy‑back program mode for fast internal page copy without external buffering.
- Power 3.0V device supply voltage range: 2.7 V to 3.6 V for flexible power‑rail integration.
- Package 48‑TSOP (0.724", 18.40 mm width) surface mount package for space‑constrained PCB designs.
- Operating Range Industrial ambient temperature range: −40 °C to 85 °C (TA).
- Data Integrity & Reliability Specified for 100,000 program/erase cycles and 10 years data retention; hardware data protection locks program/erase during power transitions.
- Boot & System Support Automatic Page 0 read at power‑up option and electronic signature/serial number options to support boot and identification workflows.
Typical Applications
- Embedded Mass Storage Local non‑volatile storage for firmware, file systems and large data storage in embedded devices where parallel NAND is suitable.
- System Boot Memory Use as boot flash with the automatic Page 0 read at power‑up option to ease bootloader download and initialization.
- Consumer & Industrial Electronics Storage for firmware and application data in compact devices where a TSOP48 footprint and industrial temperature range are required.
- Data Transfer & Staging Fast sequential access and copy‑back programming simplify internal data movement and temporary staging of pages without external buffers.
Unique Advantages
- Parallel x8 NAND Architecture: Provides straightforward integration with parallel NAND controllers and microcontrollers that support multiplexed address/data buses.
- Fast Sequential Access: 50 ns sequential access minimizes read latency for high‑throughput page reads in supported system designs.
- Low‑Voltage Operation: 2.7 V to 3.6 V supply range enables use with common 3.0 V system rails.
- Compact Surface‑Mount Package: 48‑TSOP package balances density and manufacturability for space‑constrained PCB layouts.
- Endurance and Retention: 100,000 program/erase cycles and 10 years data retention provide predictable lifecycle characteristics for long‑lived designs.
- Boot and Protection Features: Automatic Page 0 read at power‑up and program/erase locking during power transitions simplify system boot strategies and protect data during power events.
Why Choose NAND128W3A0AN6E?
The NAND128W3A0AN6E offers a straightforward, parallel NAND flash implementation for designs that need 128 Mbit of non‑volatile storage in a compact TSOP48 package. With defined performance figures for sequential and random access, industry‑standard NAND interface behavior, and features that support boot and data integrity, it is suited to embedded systems and mass‑storage oriented applications that require predictable endurance and retention.
Engineers building firmware storage, boot memory, or block‑oriented data storage solutions will find the device’s combination of voltage flexibility, temperature range, and NAND feature set useful for integration into both consumer and industrial products.
If you would like pricing, availability, or to request a quote for NAND128W3A0AN6E, please submit a quotation request or contact the supplier’s general sales channel for further assistance.

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