NAND128W3A0BN6F TR

The NAND128W3A0BN6F TR is a 128 Mbit non-volatile NAND flash memory organized as 16M × 8. It provides parallel interface access in a 48-lead TSOP package for designs that require moderate-density, parallel-access storage.

Designed to operate from a 2.7 V to 3.6 V supply and across a temperature range of -40°C to 85°C, this device is intended for systems that need a compact flash memory solution with defined timing characteristics and a standard TSOP footprint.

Key Features

• Memory Core 128 Mbit NAND flash organized as 16M × 8, providing non-volatile storage in a compact footprint.
• Technology FLASH - NAND non-volatile memory technology suitable for persistent data and code storage requirements.
• Interface & Timing Parallel memory interface with access time of 50 ns and a word/page write cycle time of 50 ns for deterministic timing behavior.
• Power Operates from a supply voltage range of 2.7 V to 3.6 V, compatible with common 3.0 V system rails.
• Package Available in a 48-TFSOP / 48-TSOP package (0.724", 18.40 mm width) for standard TSOP board layouts.
• Temperature Range Specified for operation from -40°C to 85°C (TA), supporting extended temperature applications within that range.

Typical Applications

• Embedded systems with parallel storage — Provides 128 Mbit of non-volatile memory via a parallel interface for systems that require direct parallel access.
• Firmware and code storage — Stores firmware or boot code in a 16M × 8 NAND organization suitable for fixed-content memory requirements.
• Data buffering and logging — Offers non-volatile storage for data retention across power cycles within the specified supply and temperature ranges.

Unique Advantages

• Compact TSOP footprint: The 48-TSOP (48-TFSOP) package supports standard board layouts while keeping board area compact.
• Deterministic timing: 50 ns access time and 50 ns write-cycle timing provide clear timing parameters for system design and integration.
• Wide supply tolerance: Operation from 2.7 V to 3.6 V aligns with common 3.0 V system rails for straightforward power integration.
• Broad operating temperature: Rated from -40°C to 85°C to accommodate designs that require extended temperature operation within this range.
• Standard memory organization: 16M × 8 layout simplifies address and data bus integration in parallel-memory architectures.

Why Choose NAND128W3A0BN6F TR?

The NAND128W3A0BN6F TR positions itself as a straightforward 128 Mbit parallel NAND flash memory option with defined timing, a standard TSOP package, and a supply and temperature range that match many embedded system requirements. Its 16M × 8 organization and 50 ns access/write timings make it suitable for designs that need predictable parallel flash behavior.

Manufactured by Micron Technology Inc., this device is appropriate for engineers specifying non-volatile parallel memory in compact board layouts where the stated voltage, timing, and temperature specifications meet system needs.

Request a quote or contact sales to submit a quote for the NAND128W3A0BN6F TR and discuss availability and volume pricing for your design requirements.