NAND128W3AABN6E

The NAND128W3AABN6E is a 128 Mbit non-volatile Flash memory device using NAND technology with a parallel memory interface. It is organized as 16M × 8 and is supplied in a 48-pin TSOP package.

With a 50 ns access time, 50 ns write cycle time, a 2.7 V–3.6 V supply range, and an operating temperature range of −40 °C to 85 °C (TA), this device targets designs that require compact, parallel NAND flash storage with defined timing and electrical characteristics.

Key Features

• Memory Type and Architecture  Non-volatile FLASH (NAND) memory organized as 16M × 8 for a total capacity of 128 Mbit.
• Interface  Parallel memory interface for direct parallel access and integration with parallel memory controllers.
• Performance  50 ns access time and 50 ns write cycle time for consistent read and page write timing.
• Power  Operates from a 2.7 V to 3.6 V supply range suitable for common 3.3 V systems.
• Package  48-TFSOP package (0.724", 18.40 mm width) supplied in a 48-TSOP I device package for board-level implementation.
• Temperature Range  Specified operating ambient temperature of −40 °C to 85 °C (TA).
• Compliance Notice  RoHS status not specified in the product data.

Typical Applications

• Parallel NAND flash storage systems  For designs that require a 128 Mbit parallel NAND device for non-volatile data storage.
• Embedded memory modules  Devices that need a 16M × 8 memory organization with defined access and write timings.
• Temperature-variant environments  Systems operating within −40 °C to 85 °C that require stable NAND flash behavior across that range.
• 3.3 V system integration  Designs powered within the 2.7 V–3.6 V range seeking a compact 48-pin TSOP NAND option.

Unique Advantages

• Deterministic timing: 50 ns access and write cycle times provide predictable performance for timing-sensitive designs.
• Parallel interface simplicity: Parallel memory interface allows straightforward connection to parallel controllers and processors.
• Standard memory organization: 16M × 8 layout simplifies addressing and capacity planning.
• Wide voltage compatibility: 2.7 V–3.6 V supply range supports common 3.3 V platforms.
• Wide operating temperature: −40 °C to 85 °C rating supports a broad range of ambient conditions.
• Compact TSOP packaging: 48-TFSOP / 48-TSOP I package with 18.40 mm width for efficient PCB placement.

Why Choose NAND128W3AABN6E?

NAND128W3AABN6E delivers a compact 128 Mbit NAND flash option with clear, verifiable electrical and timing specifications: 50 ns access time, 50 ns write cycle time, a 2.7 V–3.6 V supply window, and −40 °C to 85 °C operating range. Its 16M × 8 organization and parallel interface make it suitable where a defined parallel NAND memory solution is required.

Manufactured by Micron Technology Inc., the device is intended for designs that prioritize straightforward integration of parallel NAND flash in a 48-TSOP I package and need predictable performance and electrical characteristics for system planning and validation.

Request a quote or contact sales to discuss availability, lead times, and volume pricing for the NAND128W3AABN6E.