NAND256W3A0AN6

The NAND256W3A0AN6 is a 256 Mbit non-volatile NAND flash memory organized as 32M × 8 with a parallel interface in a 48‑TSOP package. It is designed for cost‑effective mass storage and embedded boot applications that require high density NAND flash with standard parallel signaling.

Key device characteristics include a 2.7 V to 3.6 V supply range, industrial operating temperature range of −40 °C to 85 °C, and fast access timing suitable for sequential data operations.

Key Features

• Memory Core 256 Mbit NAND flash organized as 32M × 8 with page and block structures suitable for mass storage applications.
• Interface Parallel NAND interface (x8 bus width) with multiplexed address/data and pinout compatibility across densities.
• Performance Specified access time of 50 ns and write cycle time (word/page) of 50 ns; datasheet details include random access up to 12 μs (max), sequential access 50 ns (min), and typical page program time of 200 μs.
• Supply & Power 3.0 V device operation with VDD range from 2.7 V to 3.6 V.
• Package 48‑TSOP (0.724" / 18.40 mm width) surface mount package for board-level implementation.
• Endurance & Retention Program/erase endurance and retention characteristics specified in the datasheet: 100,000 program/erase cycles and 10 years data retention.
• Data Management & Reliability Built‑in NAND features documented in the datasheet including bad block management, status register, electronic signature, copy‑back program mode, and fast block erase (typical 2 ms).
• System & Boot Support Options for automatic page‑0 read at power‑up and a chip‑enable "don't care" option to simplify microcontroller interfacing and boot sequences.
• Development Tools Available ECC software/hardware models, bad block management and wear‑leveling algorithms, and file system reference software as listed in the datasheet.

Typical Applications

• Mass Storage Devices Cost‑effective NAND storage for embedded and consumer systems that require high density non‑volatile memory.
• System Boot / Firmware Storage Supports automatic page‑0 read at power‑up for boot-from-NAND use cases and automatic memory download scenarios.
• Embedded and Industrial Electronics Industrial temperature range (−40 °C to 85 °C) and 3.0 V supply compatibility for a variety of embedded designs.

Unique Advantages

• High‑density NAND array: 256 Mbit capacity in an x8 organization delivers significant storage in a compact package footprint.
• Parallel NAND interface: Standard multiplexed address/data signals provide compatibility with existing parallel NAND controller designs.
• Fast sequential access: 50 ns access time for efficient sequential read operations as documented in device timing.
• Robust endurance and retention: Datasheet‑specified 100,000 program/erase cycles and 10 years data retention support long service life.
• Boot and system integration features: Automatic page‑0 read at power‑up and copy‑back program mode simplify boot and in‑system memory management.
• Tooling and software support: Provided ECC models and bad block/wear‑leveling algorithms ease integration and reliability planning.

Why Choose NAND256W3A0AN6?

NAND256W3A0AN6 positions itself as a practical, high‑density NAND flash option for embedded and mass storage applications that require a standard parallel interface, industrial temperature operation, and a compact 48‑TSOP footprint. Its documented endurance, retention, and on‑chip/system features make it suitable where proven NAND capabilities and integration support are needed.

This device is appropriate for designers seeking a 256 Mbit parallel NAND solution with detailed development resources and NAND‑specific features (copy‑back, status register, bad block management) to accelerate system integration and long‑term deployment.

Request a quote or submit an inquiry to receive pricing and availability information for NAND256W3A0AN6.