NAND256W3A0AN6F

The NAND256W3A0AN6F is a 256 Mbit parallel NAND flash memory in a 48‑TSOP package, organized as 32M x 8. It is a non‑volatile FLASH NAND device targeted at cost‑effective mass storage and embedded boot/firmware storage applications.

Built for systems requiring a parallel x8 NAND interface and 3.0 V supply operation, this device offers page and block management features, hardware protections for power transitions, and development support for error correction and wear management.

Key Features

• Memory Core 256 Mbit NAND flash organized as 32M x 8 with NAND architecture and spare area for error management.
• Interface Parallel NAND interface with x8 bus width and multiplexed address/data lines; pinout compatibility across densities simplifies board design.
• Performance Sequential access timing down to 50 ns (min) and random access reads down to 12 µs (max). Typical page program time is 200 µs and typical block erase time is 2 ms.
• Power 3.0 V device operating over VDD = 2.7 V to 3.6 V.
• Data Integrity & Endurance Designed for up to 100,000 program/erase cycles and 10 years data retention; includes status register and electronic signature options for management.
• System & Boot Support Copy‑back program mode for fast internal page-to-page operations and an automatic page 0 read at power‑up option to support boot-from-NAND workflows.
• Reliability Features Hardware data protection that locks program/erase during power transitions to reduce corruption risk.
• Package & Temperature Available in a 48‑TSOP (0.724", 18.40 mm width) package and specified for operation from −40 °C to 85 °C (TA).
• Development Support Development tools and software references for ECC, bad block management, wear leveling, and file system integration are provided for system development.

Typical Applications

• Mass Storage Devices Cost‑effective NAND flash storage for consumer and embedded mass storage applications where high density and low BOM cost are priorities.
• Embedded Firmware & Boot Storage Built‑in automatic page‑0 power‑up read and boot support enable use as primary boot media or firmware storage.
• Development & Evaluation Platforms Supplied development tools for ECC, wear leveling and bad block management make the device suitable for evaluation boards and system development.

Unique Advantages

• High‑density, cost‑effective storage: 256 Mbit NAND array provides large non‑volatile capacity for storage‑centric designs.
• Parallel NAND convenience: x8 parallel interface and pinout compatibility across densities reduce board redesign when scaling capacity.
• Boot and system integration: Automatic page‑0 read at power‑up and copy‑back mode simplify boot and internal data moves without external buffering.
• Robust endurance and retention: Specified for 100,000 program/erase cycles and 10 years data retention for longer field life.
• Power flexibility: Operates across a 2.7 V to 3.6 V supply window to match common 3 V system rails.
• Design and validation tools: ECC models, bad block management algorithms and reference software accelerate integration and validation.

Why Choose NAND256W3A0AN6F?

The NAND256W3A0AN6F positions itself as a practical, high‑density NAND flash option for designers needing parallel x8 NAND storage with boot capability and proven endurance characteristics. Its combination of 256 Mbit capacity, 48‑TSOP packaging, power flexibility (2.7 V–3.6 V) and built‑in system features addresses common embedded and mass storage requirements.

This device is suitable for teams developing firmware storage, boot media and cost‑sensitive storage subsystems where development tools for ECC, wear leveling and bad block management are required to accelerate time‑to‑market and ensure long‑term data integrity.

If you need pricing, availability or a formal quote for NAND256W3A0AN6F, request a quote or submit a pricing inquiry and our team will respond with the information you need.