NAND256W3A0AN6E

The NAND256W3A0AN6E is a 256 Mbit NAND Flash memory organized as 32M × 8 with a parallel (x8) NAND interface in a 48-TSOP package. It targets high-density non-volatile storage for mass-storage and embedded-boot applications, providing page- and block-oriented operations typical of NAND architecture.

Key device attributes include a 2.7 V to 3.6 V supply range, industrial operating temperature range of −40 °C to 85 °C, and support for automatic page 0 read at power-up to aid system boot sequences.

Key Features

• Memory Core 256 Mbit NAND Flash organized as 32M × 8 with page size (x8): 512 bytes + 16 bytes spare (528 bytes total).
• Interface and Bus Parallel NAND interface (x8) with multiplexed address/data lines and pinout compatibility across densities for straightforward board-level migration.
• Performance Random page read up to 12 μs (max); sequential access down to 50 ns (min); typical page program time ~200 μs; typical block erase time ~2 ms.
• Program/Erase Endurance and Retention Rated for 100,000 program/erase cycles and 10 years data retention.
• Power and Timing VDD supply range 2.7 V to 3.6 V; write-cycle and word/page access timing documented with typical and max timings for system integration.
• System and Reliability Features Hardware data protection (program/erase locked during power transitions), status register, electronic signature, and chip-enable “don’t care” option to simplify controller logic.
• Boot and System Support Automatic page 0 read at power-up option to support boot-from-NAND and automatic memory download scenarios.
• Package 48-TSOP package (48-TFSOP, 0.724", 18.40 mm width) for surface-mount board designs.

Typical Applications

• Mass Storage Systems Use as high-density non-volatile storage in devices that require cost-effective bulk memory.
• Embedded Boot and Firmware Storage Automatic page 0 read at power-up enables boot-from-NAND and automatic memory download implementations.
• Consumer and Industrial Embedded Devices Provides program/erase endurance and data retention suitable for long-life embedded storage in industrial temperature ranges.

Unique Advantages

• High-density NAND array: 256 Mbit capacity in an x8 organization supports substantial on-board storage while minimizing board area.
• Flexible system integration: Parallel NAND interface with multiplexed address/data and pinout compatibility across densities reduces redesign effort when scaling capacity.
• Boot support built-in: Automatic page 0 read at power-up simplifies bootloader implementations and initial code download processes.
• Robust endurance and retention: 100,000 program/erase cycles and 10 years data retention provide long-term data reliability for deployed systems.
• Power and timing margins: 2.7 V–3.6 V supply range and documented read/program/erase timings allow predictable timing and power budgeting in system designs.
• Data protection features: Hardware program/erase locking during power transitions and status register support improve data integrity during critical events.

Why Choose NAND256W3A0AN6E?

NAND256W3A0AN6E combines a high-density x8 NAND architecture with the system-level features designers expect for mass-storage and embedded-boot applications: documented performance (random and sequential read timings, program and erase timings), hardware data protection, and a broad supply-voltage and temperature range. The 48-TSOP package and pinout compatibility across densities help simplify board-level adoption and scalability.

This device is suited to designers seeking a proven NAND Flash building block for cost-efficient non-volatile storage where endurance, retention and predictable timing are required. Its built-in boot support and system protection features make it appropriate for embedded systems that require reliable initial code load and long-term data integrity.

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