NAND128W3A2BNXE

The NAND128W3A2BNXE is a 128 Mbit non-volatile FLASH NAND memory organized as 16M × 8 with a parallel interface. It delivers 50 ns access and write-cycle timing and operates from a 2.7 V to 3.6 V supply, packaged in a 48‑TSOP I (48‑TFSOP, 18.40 mm width) form factor.

This device is intended for applications requiring straightforward parallel NAND flash storage with defined performance and industrial temperature range support from −40°C to 85°C.

Key Features

• Memory Type & Technology  Non-volatile FLASH — NAND architecture providing 128 Mbit storage organized as 16M × 8.
• Performance  50 ns access time and 50 ns write cycle time (word/page) for predictable read/write timing.
• Interface  Parallel memory interface for direct integration with parallel host controllers and address/data bus designs.
• Power  Single-supply operation from 2.7 V to 3.6 V to match common system voltage rails.
• Package  48‑TSOP I (48‑TFSOP, 0.724", 18.40 mm width) surface-mount package for compact PCB footprint.
• Operating Temperature  −40°C to 85°C ambient range suitable for extended-temperature electronics applications.

Typical Applications

• Embedded non-volatile storage  Provides 128 Mbit NAND FLASH storage in systems that require parallel memory access and compact TSOP packaging.
• Firmware and code storage  Used where dedicated parallel FLASH storage with 16M × 8 organization and 50 ns timing is required for system boot or firmware images.
• Data buffering and logging  Suitable for designs needing reliable non-volatile page/word write timing at standard 2.7 V–3.6 V supply levels.

Unique Advantages

• Defined timing performance: 50 ns access and write-cycle time enable predictable read/write behavior for timing-sensitive designs.
• Standard voltage compatibility: 2.7 V–3.6 V range aligns with common system rails, simplifying power-supply requirements.
• Compact TSOP packaging: 48‑TSOP I package (18.40 mm width) reduces PCB area while providing a standard surface-mount footprint.
• Industry temperature support: −40°C to 85°C operating range supports extended-temperature applications without additional thermal qualification notes.
• Parallel interface simplicity: Parallel memory interface enables direct connection to parallel buses and controllers, reducing interface complexity.

Why Choose NAND128W3A2BNXE?

NAND128W3A2BNXE offers a concise combination of 128 Mbit NAND FLASH capacity, 50 ns read/write timing, and a parallel interface in a 48‑TSOP I package. Its 2.7 V–3.6 V supply range and −40°C to 85°C operating window make it suitable for designs that need reliable non-volatile storage with defined electrical and thermal characteristics.

This device is appropriate for engineers integrating compact parallel FLASH memory where deterministic timing, standard supply compatibility, and a small surface-mount package are required.

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