NAND128W3A2BN6F TR
| Part Description |
IC FLASH 128MBIT PARALLEL 48TSOP |
|---|---|
| Quantity | 930 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of NAND128W3A2BN6F TR – 128 Mbit Parallel NAND Flash, 48‑TSOP
The NAND128W3A2BN6F TR is a 128 Mbit non-volatile FLASH NAND memory device organized as 16M × 8. It provides parallel memory access in a compact 48-TSOP package and is manufactured by Micron Technology Inc.
With a 50 ns access time, 50 ns write cycle time, a 2.7 V–3.6 V supply range and an operating temperature of -40°C to 85°C, this device targets designs that require deterministic parallel flash storage with defined electrical and thermal characteristics.
Key Features
- Memory 128 Mbit capacity organized as 16M × 8, delivered as parallel FLASH NAND non-volatile memory.
- Technology FLASH - NAND architecture provides non-volatile storage in a standard parallel format.
- Performance 50 ns access time and 50 ns write cycle time (word/page) for predictable read/write timing.
- Interface Parallel memory interface suitable for systems that use parallel flash connections.
- Power Operates from 2.7 V to 3.6 V, matching common 3.3 V system rails.
- Package 48-TFSOP / 48-TSOP package with 0.724" (18.40 mm) width for compact board-level integration.
- Temperature Range Rated for operation from -40°C to 85°C (TA) to support designs that require extended temperature capability.
Typical Applications
- Embedded Systems Parallel NAND flash storage for firmware and data in embedded controller and microprocessor designs.
- Consumer Electronics On-board non-volatile memory for devices that use parallel flash architectures.
- Industrial Equipment Non-volatile storage option for equipment requiring operation across -40°C to 85°C.
Unique Advantages
- Parallel interface for straightforward integration: Enables direct connection to systems designed for parallel flash memory.
- Deterministic timing: 50 ns access and write cycle times provide predictable memory performance for timing-sensitive designs.
- Wide supply range: 2.7 V–3.6 V operation supports compatibility with standard 3.3 V platforms.
- Compact TSOP footprint: 48-TFSOP/48-TSOP package minimizes PCB area while preserving pin access for parallel connections.
- Extended temperature operation: -40°C to 85°C rating supports use in temperature-challenging environments.
Why Choose NAND128W3A2BN6F TR?
The NAND128W3A2BN6F TR is positioned as a straightforward, specification-driven parallel NAND flash solution from Micron Technology Inc. Its 128 Mbit capacity, parallel interface, defined 50 ns timing, and 2.7 V–3.6 V supply range make it suitable for designs that require predictable non-volatile storage behavior in a compact 48-TSOP package.
This device is appropriate for engineers and procurement teams specifying parallel FLASH NAND for embedded, consumer, or industrial applications where clear electrical, timing, and temperature requirements are a priority.
Request a quote or contact sales to discuss pricing, availability, and sample requests for the NAND128W3A2BN6F TR.
