NAND128W3A0BN6E

The NAND128W3A0BN6E is a 128 Mbit non-volatile NAND flash memory device supplied in a 48‑TSOP package. It provides a parallel memory interface with a 16M × 8 organization and is designed for systems that require onboard parallel NAND storage.

Key electrical and timing characteristics include a 2.7 V to 3.6 V supply range and a 50 ns access time and write cycle time (word/page), with an operating temperature range of -40°C to 85°C.

Key Features

• Memory Type & Technology Non-volatile NAND flash memory providing persistent data storage without external power.
• Capacity & Organization 128 Mbit capacity organized as 16M × 8 for byte-wide parallel access.
• Interface Parallel memory interface suitable for systems that use parallel NAND connections.
• Performance / Timing 50 ns access time and 50 ns write cycle time (word/page) support moderate-speed read and program operations.
• Voltage Supply Operates from 2.7 V to 3.6 V to accommodate common 3 V system rails.
• Package 48‑TFSOP / 48‑TSOP package (0.724", 18.40 mm width) for surface-mount PCB assembly.
• Operating Temperature Specified for -40°C to 85°C ambient (TA), supporting a wide commercial to industrial temperature envelope.

Typical Applications

• Parallel storage subsystems Provides 128 Mbit parallel NAND flash for designs that require byte-wide non-volatile memory.
• Embedded memory for control systems Used where non-volatile program or data storage with a parallel interface is needed.
• Low-voltage systems Suitable for systems operating from 2.7 V to 3.6 V that require on-board NAND storage.

Unique Advantages

• Byte-wide memory organization: 16M × 8 configuration enables direct 8‑bit parallel access for simpler bus integration.
• Moderate access and write timing: 50 ns access and write cycle times provide predictable performance for read and program operations.
• Wide supply range: 2.7 V to 3.6 V compatibility supports common 3 V system power domains.
• Commercial-to-industrial temperature range: Rated from -40°C to 85°C for deployments across a broad ambient range.
• Industry-standard package: 48‑TSOP form factor simplifies placement in designs that accept TFSOP/TSOP packages.

Why Choose IC FLASH 128MBIT PARALLEL 48TSOP?

NAND128W3A0BN6E delivers 128 Mbit of parallel NAND flash in a 48‑TSOP footprint with defined timing and electrical characteristics. Its 16M × 8 organization, 50 ns access and write timings, and 2.7 V–3.6 V supply make it a straightforward option for designs that require compact, byte-wide non-volatile storage across a wide operating temperature range.

This device is suited to engineers and designers integrating parallel NAND storage into embedded platforms where predictable timing, standard packaging, and a common supply range are priorities. Its specification-focused design supports straightforward evaluation and BOM inclusion for projects requiring this specific memory configuration.

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