NAND128W3A2BN6E
| Part Description |
IC FLASH 128MBIT PARALLEL 48TSOP |
|---|---|
| Quantity | 1,236 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of NAND128W3A2BN6E – IC FLASH 128MBIT PARALLEL 48TSOP
The NAND128W3A2BN6E is a 128 Mbit parallel NAND flash memory device in a 48‑TSOP package. It implements a 16M × 8 memory organization and provides non‑volatile storage with parallel interface access.
Designed for applications that require byte‑wide parallel flash storage, the device offers 50 ns access and 50 ns write cycle timings, a 2.7 V to 3.6 V supply range, and operation from -40°C to 85°C.
Key Features
- Memory Core 128 Mbit non‑volatile NAND flash organized as 16M × 8 for byte‑wide data access.
- Interface & Organization Parallel memory interface with an 8‑bit organization suitable for direct parallel bus connections.
- Performance Read access time of 50 ns and write cycle time (word/page) of 50 ns to support responsive program and read operations.
- Power Standard 2.7 V to 3.6 V voltage supply range for compatibility with common 3.3 V systems.
- Package 48‑TFSOP (48‑TSOP) package; package width 0.724" (18.40 mm) for board‑level mounting.
- Temperature Range Operating temperature from -40°C to 85°C (TA).
Unique Advantages
- 128 Mbit density: Provides a compact non‑volatile storage capacity in a single 16M × 8 device for designs needing moderate flash density.
- Byte‑wide parallel access: 16M × 8 organization with a parallel interface enables straightforward integration with parallel memory buses and controllers.
- Fast read and write timings: 50 ns access and 50 ns write cycle times support responsive data transfer and program operations.
- Flexible power range: Operates across 2.7 V to 3.6 V supply rails to accommodate common system power domains.
- Standard 48‑TSOP package: Industry‑recognized 48‑TFSOP / 48‑TSOP package (0.724", 18.40 mm width) for known footprint and assembly processes.
- Extended temperature support: Rated for -40°C to 85°C operation to meet designs that require extended ambient temperature tolerance.
Why Choose NAND128W3A2BN6E?
The NAND128W3A2BN6E combines a 128 Mbit NAND architecture with byte‑wide parallel connectivity and fast 50 ns access/write times, packaged in a 48‑TSOP form factor. These attributes make it suitable for designs that require non‑volatile parallel flash memory with defined timing, supply, and temperature characteristics.
Manufactured by Micron Technology Inc., the device offers a clear set of electrical and mechanical specifications—memory organization, voltage range, timing, package dimensions, and operating temperature—for engineers evaluating parallel NAND solutions for their systems.
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