NAND128W3AABN6F TR
| Part Description |
IC FLASH 128MBIT PAR 48TSOP I |
|---|---|
| Quantity | 786 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of NAND128W3AABN6F TR – 128 Mbit NAND Flash, Parallel, 48‑TSOP I
The NAND128W3AABN6F TR is a 128 Mbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It implements a parallel memory interface in a 16M × 8 organization and is supplied in a 48‑TSOP I package.
With a 50 ns access time, 50 ns write cycle time (word/page), a 2.7 V–3.6 V supply range and an operating temperature range of −40°C to 85°C, the device is specified for systems that require parallel NAND flash memory in a compact TSOP footprint.
Key Features
- Memory Type & Capacity 128 Mbit NAND flash organized as 16M × 8, providing non-volatile storage in a parallel memory format.
- Performance 50 ns access time and 50 ns write cycle time (word/page) for read/write operations.
- Interface Parallel memory interface suitable for designs that use parallel data buses.
- Voltage Supply Operates from 2.7 V to 3.6 V.
- Temperature Range Rated for operation from −40°C to 85°C (TA).
- Package 48‑TSOP I package (48‑TFSOP, 0.724" / 18.40 mm width) for compact PCB implementation.
Unique Advantages
- 128 Mbit density: Provides a 16M × 8 organization for moderate-density non-volatile storage.
- Deterministic timing: 50 ns access and 50 ns write cycle times give clear timing parameters for system design.
- Parallel bus compatibility: Parallel interface supports integration into designs that use parallel memory architectures.
- Flexible power range: 2.7 V–3.6 V supply enables use in typical 3.3 V systems.
- Wide operating temperature: −40°C to 85°C rating supports applications across a broad thermal envelope.
- Compact TSOP footprint: 48‑TSOP I (0.724", 18.40 mm width) package conserves board space while providing standard TSOP pinout.
Why Choose IC FLASH 128MBIT PAR 48TSOP I?
This Micron-manufactured NAND128W3AABN6F TR device combines 128 Mbit NAND flash capacity with defined 50 ns read/write timings, a parallel interface, and a compact 48‑TSOP I package. The electrical and thermal specifications—2.7 V–3.6 V supply and −40°C to 85°C operating range—make it a straightforward option for designs that require a parallel NAND flash memory with known, verifiable parameters.
The device is suited to engineers and procurement teams seeking a parallel NAND flash component with clear organization and package details for integration into existing parallel bus architectures and space-constrained PCBs.
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