NAND256W3A2BN6E

The NAND256W3A2BN6E is a 256 Mbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It implements NAND flash architecture with a 32M × 8 memory organization and provides a parallel memory interface for system integration.

Designed for systems that require compact, board-mounted parallel FLASH storage, this device offers 50 ns access and write cycle times, a 2.7 V to 3.6 V supply range, and an extended operating temperature of −40°C to 85°C, making it suitable for a range of embedded and industrial applications.

Key Features

• Memory Core 256 Mbit FLASH - NAND organized as 32M × 8 for byte-oriented data access and storage capacity.
• Performance 50 ns access time and 50 ns write cycle time (word/page) to support responsive read and write operations.
• Interface Parallel memory interface for direct connection to parallel memory buses and controllers.
• Power Operates from a 2.7 V to 3.6 V supply range to support common 3 V system rails.
• Package 48-TFSOP (48-TSOP) package with a 0.724" (18.40 mm) width for compact board-level footprint.
• Temperature Range Rated for operation from −40°C to 85°C (TA) to accommodate extended-temperature deployments.

Typical Applications

• Embedded systems — On-board non-volatile storage where parallel NAND flash is required for program or data retention.
• Industrial devices — Systems needing FLASH memory that supports extended ambient temperatures and a 3 V supply range.
• Board-level memory expansion — Adding 256 Mbit parallel NAND storage in a compact 48-TSOP package for space-constrained PCBs.

Unique Advantages

• Compact 48-TSOP package: Enables high-density board integration while conserving PCB area with a 0.724" (18.40 mm) width.
• Parallel interface simplicity: Direct parallel connection simplifies interfacing to existing parallel memory controllers and reduces integration complexity.
• Fast access and write cycles: 50 ns read and write cycle times support responsive system behavior for read/write workloads.
• Wide supply voltage compatibility: 2.7 V to 3.6 V operating range fits common 3 V system rails for flexible power design.
• Extended operating temperature: −40°C to 85°C rating supports deployment in environments requiring broader thermal range.

Why Choose IC FLASH 256MBIT PARALLEL 48TSOP?

The NAND256W3A2BN6E provides a straightforward, board-mountable NAND flash solution combining 256 Mbit capacity, parallel interface connectivity, and fast 50 ns access and write timing. Packaged in a 48-TSOP form factor and produced by Micron Technology Inc., it is suitable for designs that require compact, non-volatile storage with a common 2.7 V–3.6 V supply and extended-temperature operation.

This device is well suited for engineers and procurement teams seeking a reliable parallel NAND FLASH memory option for embedded, industrial, or board-level storage applications where predictable electrical and thermal specifications are important for long-term design stability.

Request a quote or submit a procurement inquiry to receive pricing, lead-time, and availability information for the NAND256W3A2BN6E.