NAND256W3A2BNXE

The NAND256W3A2BNXE is a 256 Mbit non-volatile FLASH (NAND) memory device supplied in a 48‑TSOP I package. It implements a 32M × 8 memory organization with a parallel memory interface and is specified for operation from -40°C to 85°C.

Designed for board-level integration where parallel NAND storage is required, the device delivers balanced access and write timings with a supply voltage range of 2.7 V to 3.6 V, enabling straightforward power-domain integration in embedded and industrial designs.

Key Features

• Memory Type Non-volatile FLASH — NAND technology providing 256 Mbit of persistent storage organized as 32M × 8.
• Interface Parallel memory interface for direct, byte-oriented access suited to legacy and parallel bus designs.
• Performance 50 ns access time and 50 ns write cycle time (word/page) for predictable read/write latency.
• Power Supply voltage range 2.7 V to 3.6 V, allowing compatibility with common 3.3 V systems and tolerant power-rail design.
• Package 48‑TSOP I (48‑TFSOP, 0.724", 18.40 mm width) — compact TSOP footprint for board-level mounting and high-density assemblies.
• Operating Temperature Specified for -40°C to 85°C (TA), supporting extended temperature operation for industrial use cases.

Typical Applications

• Embedded storage Parallel NAND flash for systems that require on-board non-volatile code and data storage.
• Industrial controllers Storage in equipment that operates across -40°C to 85°C temperature range.
• Board-level memory expansion Integration where a 48‑TSOP I package and parallel interface fit existing PCB layouts.

Unique Advantages

• 256 Mbit density: Provides a substantial amount of non-volatile storage in a single device for firmware, look-up tables, or file storage.
• Parallel interface simplicity: Byte-oriented parallel access reduces interface complexity for designs that use parallel memory buses.
• Deterministic timing: 50 ns access and write cycle timings enable predictable read/write behavior for system integration and timing analysis.
• Broad supply compatibility: 2.7 V to 3.6 V supply range aligns with common 3.3 V system rails, simplifying power design.
• Compact TSOP footprint: 48‑TSOP I package supports high-density board layouts while maintaining convenient handling and placement.
• Extended temperature support: Operation from -40°C to 85°C addresses use in temperature-challenged environments.

Why Choose NAND256W3A2BNXE?

The NAND256W3A2BNXE delivers a straightforward, parallel NAND FLASH solution with a clear set of electrical and mechanical specifications. Its 256 Mbit 32M × 8 organization, 50 ns timing characteristics, and 2.7 V–3.6 V supply range make it suitable for designs that require reliable, board-mounted non-volatile storage in a compact 48‑TSOP I package.

This device is well suited to engineering teams that need predictable timing, a familiar parallel interface, and defined thermal and voltage envelopes for long-term design planning and system integration.

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