NAND256W3A2BZA6F TR

The NAND256W3A2BZA6F TR is a 256 Mbit non-volatile NAND flash memory device with a parallel interface, provided in a 55-ball VFBGA package. It delivers compact on-board storage for embedded systems and electronic devices requiring persistent data or code storage.

Designed with a 32M × 8 memory organization and a 2.7 V–3.6 V supply range, this device targets applications that need predictable access and write timing in a compact BGA footprint across a commercial temperature range.

Key Features

• Memory Type and Technology  Non-volatile NAND flash memory implemented as 256 Mbit capacity, suitable for persistent data and code storage.
• Memory Organization  32M × 8 organization provides byte-wide data access for parallel interfacing and byte-oriented system designs.
• Performance  50 ns access time and 50 ns write cycle time (word/page) enable consistent read/write timing for systems with deterministic memory requirements.
• Power  Operates from a 2.7 V to 3.6 V supply, accommodating typical 3.3 V system rails and allowing straightforward power integration.
• Package  Supplied in a 55-TFBGA / 55-VFBGA (8 × 10) package that reduces board area while providing a solderable BGA footprint for surface-mount assembly.
• Operating Temperature  Rated for −40°C to 85°C (TA), supporting operation across common commercial and industrial ambient conditions.
• Interface  Parallel memory interface for compatibility with parallel bus architectures and legacy parallel flash designs.

Typical Applications

• Embedded Systems  Non-volatile storage of firmware, configuration data, or application data in microcontroller- and processor-based systems.
• Consumer Electronics  Persistent storage for device settings, user data caches, and local content in compact consumer devices.
• Industrial Control  Storage of control code and logs in industrial equipment that requires operation across −40°C to 85°C.
• Networking and Communications  Local storage for boot code, configuration tables, or firmware images in networking modules and appliances.

Unique Advantages

• Deterministic read/write timing: 50 ns access and write cycle times provide predictable memory performance for timing-sensitive applications.
• Compact BGA footprint: 55-ball VFBGA (8 × 10) package minimizes PCB area while supporting surface-mount assembly processes.
• Wide supply range: 2.7 V–3.6 V operation enables compatibility with standard 3.3 V systems and flexible power design.
• Byte-oriented organization: 32M × 8 layout simplifies integration with byte-wide parallel data buses.
• Extended operating temperature: −40°C to 85°C rating supports a broad range of ambient operating environments.
• Manufacturer backing: Supplied by Micron Technology Inc., providing access to a recognized memory vendor for sourcing and lifecycle considerations.

Why Choose IC FLASH 256MBIT PAR 55VFBGA?

The IC FLASH 256MBIT PAR 55VFBGA (NAND256W3A2BZA6F TR) combines a 256 Mbit NAND architecture with a parallel interface and compact 55-ball VFBGA package for space-constrained designs that require persistent on-board storage. Its 50 ns access and write timing, along with a 32M × 8 organization, make it well suited for systems that rely on predictable memory behavior and straightforward byte-wide interfacing.

This device is appropriate for designers building embedded, consumer, industrial, or networking products that need reliable non-volatile storage across a −40°C to 85°C operating range and standard 2.7 V–3.6 V power rails. Backed by Micron Technology Inc., it supports procurement and lifecycle planning where a known memory vendor is required.

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