NAND256W3A2BZA6E
| Part Description |
IC FLASH 256MBIT PAR 55VFBGA |
|---|---|
| Quantity | 264 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 55-VFBGA (8x10) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 55-TFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of NAND256W3A2BZA6E – IC FLASH 256Mbit Parallel, 55-VFBGA
The NAND256W3A2BZA6E from Micron Technology Inc. is a 256 Mbit non-volatile NAND flash memory organized as 32M × 8 with a parallel memory interface. It delivers 50 ns access performance and a 50 ns write cycle time for word/page operations.
Designed for applications requiring compact, parallel flash storage, this device operates from a 2.7 V to 3.6 V supply and is available in a 55‑ball VFBGA (8×10) package with an operating temperature range of −40°C to 85°C.
Key Features
- Memory Type & Technology
Non-volatile FLASH NAND architecture providing 256 Mbit of storage capacity organized as 32M × 8. - Interface
Parallel memory interface suitable for designs requiring parallel flash access. - Performance
50 ns access time and 50 ns write cycle time (word/page) to support fast read and write operations. - Power
Wide supply voltage range of 2.7 V to 3.6 V for compatibility with common 3 V systems. - Package
55‑VFBGA (8×10) package to enable compact board-level integration. - Temperature Range
Rated for operation from −40°C to 85°C (TA) for use in temperature‑varying environments.
Unique Advantages
- Compact VFBGA footprint: The 55‑ball VFBGA (8×10) package reduces PCB area for space‑constrained designs.
- Parallel interface for legacy or high‑throughput designs: Parallel memory access supports architectures that leverage byte‑wide data paths.
- Fast access and write timing: 50 ns access and write cycle times help minimize memory latency in read/write intensive tasks.
- Wide operating voltage: 2.7 V to 3.6 V supply range eases integration with common 3 V power rails.
- Extended operating temperature: −40°C to 85°C rating supports deployment across a broad range of environmental conditions.
Why Choose IC FLASH 256MBIT PAR 55VFBGA?
The NAND256W3A2BZA6E offers a compact, parallel 256 Mbit NAND flash solution with verified timing (50 ns access and write cycle) and a standard 2.7 V–3.6 V supply window. Its 55‑ball VFBGA (8×10) package and −40°C to 85°C operating range make it suitable for designs that require compact non‑volatile storage with defined performance and environmental tolerance.
This part is appropriate for engineers specifying parallel NAND flash where capacity, access speed, and a small BGA footprint are primary considerations, and where operating voltage and temperature requirements align with the device specifications.
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