NAND256W3A2BN6F

IC FLASH 256MBIT PARALLEL 48TSOP
Part Description

IC FLASH 256MBIT PARALLEL 48TSOP

Quantity 796 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerSTMicroelectronics
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOPMemory FormatFLASHTechnologyFLASH - NAND
Memory Size256 MbitAccess Time50 nsGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page50 nsPackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of NAND256W3A2BN6F – IC FLASH 256MBIT PARALLEL 48TSOP

The NAND256W3A2BN6F is a 256 Mbit non-volatile flash memory organized as 32M × 8 and implemented in NAND flash technology. It provides parallel memory access and is packaged in a 48‑TSOP (48‑TFSOP) package with an 18.40 mm width.

Designed for systems that require parallel NAND storage with a compact board‑level footprint, this device offers 50 ns access and write cycle timing and operates from a 2.7 V to 3.6 V supply over an ambient temperature range of −40 °C to 85 °C.

Key Features

  • Memory Core  256 Mbit NAND flash organized as 32M × 8 for byte-oriented storage.
  • Memory Technology  Non‑volatile FLASH (NAND) providing persistent data retention without power.
  • Interface  Parallel memory interface for direct system bus connection and byte‑wide data transfers.
  • Performance  50 ns access time and 50 ns write cycle time (word/page) for read/write responsiveness.
  • Power  Wide supply range from 2.7 V to 3.6 V to accommodate common 3 V system rails.
  • Package  48‑TFSOP (48‑TSOP) package with 0.724" (18.40 mm) width for board mounting.
  • Operating Range  Ambient operating temperature from −40 °C to 85 °C for extended temperature applications.

Typical Applications

  • Embedded system storage  Parallel NAND flash for program code and persistent data storage in embedded designs requiring a byte‑wide interface.
  • Firmware and boot code  Non‑volatile storage of firmware and boot sequences where parallel access and 32M × 8 organization are required.
  • Board‑level data storage  Compact 48‑TSOP package suited to board‑level integration for systems needing up to 256 Mbit of NAND storage.

Unique Advantages

  • Parallel interface compatibility: Simplifies integration with systems that use byte‑wide parallel memory buses, reducing interface complexity.
  • Predictable timing: 50 ns access and write cycle times enable straightforward timing budgets for read and write operations.
  • Flexible power range: 2.7 V to 3.6 V supply range supports common 3 V system architectures and enables use across varied power domains.
  • Compact board footprint: 48‑TSOP (48‑TFSOP) package provides a standardized form factor for dense board layouts.
  • Extended temperature operation: −40 °C to 85 °C ambient rating supports deployment in environments with a wide temperature span.

Why Choose IC FLASH 256MBIT PARALLEL 48TSOP?

The NAND256W3A2BN6F positions itself as a practical parallel NAND flash option where a 256 Mbit capacity, byte‑wide organization (32M × 8), and 50 ns timing are required. Its 2.7 V to 3.6 V supply range and extended ambient temperature rating make it suitable for designs that require stable non‑volatile storage across a variety of operating conditions.

This device is well suited to engineers implementing board‑level storage for firmware, boot code, or application data who need a compact 48‑TSOP package and direct parallel interface. The combination of specifications supports predictable integration and straightforward timing and power planning in system designs.

Request a quote or submit an inquiry to our sales team to check availability, lead times, and pricing for the NAND256W3A2BN6F.

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