NAND256W3A2BN6F TR

The NAND256W3A2BN6F TR is a 256 Mbit non-volatile NAND flash memory device from Micron Technology Inc., organized as 32M × 8. It provides parallel NOR-style access characteristics with a 48-TFSOP (48-TSOP) package, supporting standard 2.7 V to 3.6 V system supplies.

Suited to designs that require moderate-capacity NAND storage in a compact board footprint, this device targets embedded storage uses where parallel interface access, a 50 ns access time, and wide operating temperature range are required.

Key Features

• Memory — 256 Mbit non-volatile NAND flash, organized as 32M × 8 for byte-wide data transfers.
• Performance — 50 ns access time and 50 ns write cycle time (word/page) for predictable read/write timing.
• Interface — Parallel memory interface enabling direct parallel bus connections and byte-wide data paths.
• Power — Operates from a 2.7 V to 3.6 V supply range, compatible with common 3 V systems.
• Package — 48-TFSOP (48-TSOP) package, 0.724" (18.40 mm) width, for space-efficient surface-mount designs.
• Environmental Range — Rated for an operating ambient temperature range of −40 °C to 85 °C (TA).

Typical Applications

• Embedded storage — Provides 256 Mbit non-volatile storage for embedded controllers and modules that use a parallel memory interface.
• Firmware and code storage — Byte-wide organization and 50 ns access time support storage of firmware and code images where parallel access is required.
• Data logging and local data storage — Moderate-capacity NAND memory suitable for systems that store operational data or logs within the device's voltage and temperature ranges.

Unique Advantages

• Compact surface-mount footprint: The 48-TFSOP (48-TSOP) package offers a standardized, space-efficient option for board-level integration.
• Predictable timing: 50 ns access and write cycle times provide defined performance characteristics for system timing and interface design.
• Standard 3 V supply compatibility: 2.7 V–3.6 V operating range aligns with common 3 V system rails for simplified power design.
• Wide operating temperature: −40 °C to 85 °C rating supports deployment across commercial and industrial ambient conditions.
• Byte-wide organization: 32M × 8 memory organization supports straightforward parallel byte transfers for legacy and existing parallel-memory architectures.
• Micron device: Sourced from Micron Technology Inc., providing traceable manufacturer provenance.

Why Choose IC FLASH 256MBIT PARALLEL 48TSOP?

The NAND256W3A2BN6F TR combines a 256 Mbit NAND Flash architecture with a parallel interface and a compact 48-TSOP package, delivering a clear specification set for embedded designs that require moderate-capacity non-volatile storage. Its 50 ns access and write-cycle timings, standard 2.7 V–3.6 V supply range, and −40 °C to 85 °C operating range make it suitable for systems where predictable timing, power compatibility, and environmental tolerance matter.

This device is appropriate for engineers designing embedded controllers, firmware storage solutions, and data-logging systems that use parallel memory architectures and require a compact surface-mount package from a recognized memory manufacturer.

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