NAND256W3A2BZAXE
| Part Description |
IC FLASH 256MBIT PAR 55VFBGA |
|---|---|
| Quantity | 571 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 55-VFBGA (8x10) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 55-TFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of NAND256W3A2BZAXE – IC FLASH 256MBIT PAR 55VFBGA
The NAND256W3A2BZAXE is a 256‑Mbit parallel NAND flash memory device with a 32M × 8 organization. It provides non-volatile storage in a 55‑VFBGA (8×10) package and operates from a 2.7 V to 3.6 V supply.
Key electrical and timing characteristics include a 50 ns access time and a 50 ns write cycle time for word/page operations. The device is specified for operation over an ambient temperature range of -40°C to 85°C.
Key Features
- Memory Core 256 Mbit NAND flash arranged as 32M × 8 for byte-oriented storage.
- Performance 50 ns access time and 50 ns write cycle time (word/page) allow deterministic read/write timing.
- Interface & Organization Parallel memory interface supporting conventional parallel bus connections with an 8‑bit data organization.
- Power Single supply operation from 2.7 V to 3.6 V to match common 3 V system rails.
- Package 55‑VFBGA (8×10) package for board‑level mounting and compact footprint.
- Temperature Range Rated for ambient operation from -40°C to 85°C.
Unique Advantages
- Parallel interface compatibility: Supports parallel bus connections and 8‑bit data organization for straightforward integration with parallel host controllers.
- Predictable timing: 50 ns access and write cycle times provide consistent performance metrics for system timing budgets.
- Wide supply range: 2.7 V to 3.6 V operation enables use with common 3 V power rails.
- Compact BGA package: 55‑VFBGA (8×10) offers a small board footprint for space‑constrained designs.
- Extended ambient operation: Rated from -40°C to 85°C to support a broad range of operating environments.
- Clear memory organization: 32M × 8 arrangement simplifies address/data planning and memory mapping.
Why Choose IC FLASH 256MBIT PAR 55VFBGA?
The NAND256W3A2BZAXE delivers a compact, single‑supply NAND flash solution with clearly defined timing and memory organization. Its combination of 256 Mbit density, parallel 8‑bit interface, and 55‑VFBGA packaging supports integration into designs that require non‑volatile NAND storage with predictable electrical and timing characteristics.
This device is appropriate for designers and procurement teams seeking a board‑level NAND flash component specified for -40°C to 85°C operation and 2.7 V–3.6 V supply compatibility, providing a straightforward footprint and performance profile for system integration.
Request a quote or contact our sales team to submit a quote or inquire about availability and pricing for NAND256W3A2BZAXE. Include required quantities and delivery timing to receive a tailored response.
