NAND512R3A2BZA6E

IC FLASH 512MBIT PAR 63VFBGA
Part Description

IC FLASH 512MBIT PAR 63VFBGA

Quantity 218 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerSTMicroelectronics
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package63-VFBGA (8.5x15)Memory FormatFLASHTechnologyFLASH - NAND
Memory Size512 MbitAccess Time60 nsGradeIndustrial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page60 nsPackaging63-VFBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of NAND512R3A2BZA6E – 512 Mbit Parallel NAND Flash, 63-VFBGA

The NAND512R3A2BZA6E is a 512 Mbit non-volatile NAND Flash memory organized as 64M × 8. It implements a parallel NAND interface in a 63‑VFBGA (8.5 × 15 mm) package and is designed for mass-storage and embedded boot applications that require high-density non-volatile storage.

With a 1.7 V to 1.95 V supply range, industrial operating temperature support (‑40 °C to 85 °C), and on-chip NAND features such as automatic page 0 read and status register, this device targets embedded systems that need compact, low‑voltage flash storage with development tool support for error correction and bad-block management.

Key Features

  • Memory Architecture — 512 Mbit NAND Flash organized as 64M × 8 with parallel x8 bus width.
  • High Density Storage — Designed as a high-density NAND family member (128 Mbit to 1 Gbit); cost-effective solution for mass storage applications as described in the product family summary.
  • Page and Block Structure — x8 page size defined as 528 bytes (512 + 16 spare) and block sizes consistent with the NAND family (x8 block: 16K + 512 spare bytes); supports page program and block erase operations.
  • Read/Program/Erase Performance — Access time specified at 60 ns with write cycle time (word/page) at 60 ns; datasheet extracts report page program time (typical 200 μs) and block erase time (typical 2 ms).
  • Low-Voltage Operation — 1.8 V device operation with VDD = 1.7 to 1.95 V for lower-power system designs.
  • Reliability and Data Integrity — On‑chip hardware data protection during power transitions; rated for 100,000 program/erase cycles and 10 years data retention according to the product family documentation.
  • System-Level Features — NAND interface with multiplexed address/data lines, copy-back program mode for internal page-to-page copies without external buffering, status register and electronic signature, and an automatic page‑0 read at power‑up option for boot support.
  • Package and Temperature — 63‑VFBGA package (8.5 × 15 mm) with operating temperature range from ‑40 °C to 85 °C.
  • Development Support — Family documentation and tools include ECC software/hardware models, bad-block management and wear-leveling algorithms, and reference/demo software and boards as noted in the product materials.

Typical Applications

  • Mass Storage — High-density NAND array suitable for embedded mass-storage use where compact non-volatile capacity is required.
  • Embedded Boot Memory — Automatic page‑0 read at power-up and electronic signature features enable boot and automatic memory download scenarios.
  • Consumer and Portable Devices — Compact 63‑VFBGA package and low-voltage (1.7–1.95 V) operation fit space‑constrained, battery‑operated designs requiring solid-state storage.

Unique Advantages

  • High-density, parallel NAND array: 512 Mbit capacity in a single x8 device simplifies board design for medium-density storage requirements.
  • Low-voltage operation: 1.7 V to 1.95 V VDD range enables lower power supply design choices and compatibility with 1.8 V systems.
  • Built-in storage management features: Copy-back program mode, status register, electronic signature and automatic page‑0 read reduce external buffering and simplify boot flows.
  • Robust data endurance and retention: Product family specifies 100,000 program/erase cycles and 10 years data retention for lifecycle planning.
  • Compact BGA footprint: 63‑VFBGA (8.5 × 15 mm) provides a small board area for systems where PCB space is constrained.
  • Development and integration support: Family-level ECC models, bad-block management, and reference software/boards help accelerate integration and validation.

Why Choose IC FLASH 512MBIT PAR 63VFBGA?

The IC FLASH 512MBIT PAR 63VFBGA (NAND512R3A2BZA6E) offers a straightforward, parallel x8 NAND Flash option for designs that need 512 Mbit of non-volatile storage in a compact BGA package. Its low-voltage VDD range, on-chip NAND management features, and documented endurance/retention characteristics make it suitable for embedded mass-storage and boot memory applications.

Engineers designing space- and power-constrained systems will find the device’s package, supply requirements, and available development resources (ECC and bad-block management models, demo boards, and reference software) helpful for speeding integration and validation in production designs.

Request a quote or submit a purchase inquiry to receive pricing and availability information for NAND512R3A2BZA6E.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay

    Date Founded: 1987


    Headquarters: Plan-les-Ouates, Geneva, Switzerland


    Employees: 50,000+


    Revenue: $17.24 Billion


    Certifications and Memberships: ISO9001:2015, ISO14001:2015, ISO45001:2018, IATF16949:2016, ISO50001:2018


    Featured Products
    Latest News
    keyboard_arrow_up