W9412G6IH-5

The W9412G6IH-5 from Winbond Electronics is a 128 Mbit DDR SDRAM device organized as 8M × 16 (2M × 4 banks × 16 bits). It implements DDR SDRAM architecture with an SSTL_2 memory interface for synchronous, double-data-rate operation.

Key electrical and mechanical characteristics include a 200 MHz clock frequency, 50 ns access time, 2.3 V–2.7 V supply range, and a 66‑TSSOP (66‑TSOP II) package. The device is specified for operation from 0 °C to 70 °C and includes comprehensive timing and command support in the datasheet for system integration.

Key Features

• Memory Core 128 Mbit DDR SDRAM organized as 8M × 16 (2M × 4 banks × 16 bits).
• Interface SSTL_2 memory interface for compatible signaling and system interconnect.
• Performance & Timing Supports a 200 MHz clock frequency with a 50 ns access time and a write cycle time (word page) of 15 ns.
• Command & Operation Set Full DDR command support including Bank Activate, Precharge, Read, Write, Auto Refresh, Self Refresh, Mode Register Set/Extended Mode Register Set, No-Operation, and Power Down sequences as documented in the datasheet.
• Power Operates from a 2.3 V to 2.7 V supply; datasheet includes recommended power-up sequence and power-down behavior.
• Package & Temperature Supplied in a 66‑TSSOP (0.400", 10.16 mm width) / 66‑TSOP II package and specified for ambient operation from 0 °C to 70 °C.
• Documentation & Timing Tables Datasheet provides extensive AC characteristics, timing waveforms, system timing tables (input/output setup/hold derating, slew-rate guidance) and operation mode tables to aid board-level integration.

Unique Advantages

• Standard DDR architecture: The device’s DDR SDRAM organization (2M × 4 banks × 16 bits) provides deterministic bank and burst behavior defined in the datasheet for predictable memory sequencing.
• SSTL_2 signaling compatibility: Native SSTL_2 memory interface and documented AC characteristics enable integration with controllers and systems that use SSTL_2 signaling levels.
• Defined timing performance: 200 MHz clock frequency, 50 ns access time, and 15 ns write cycle time (word page) give specific, verifiable timing targets for system timing budgets.
• Compact TSOP II footprint: 66‑TSSOP / 66‑TSOP II package (10.16 mm width) supports space-conscious PCB designs while maintaining standard pinout and mechanical dimensions.
• Comprehensive datasheet support: Detailed command descriptions, mode register fields (burst length, CAS latency, DLL reset, etc.), and extensive timing tables simplify validation and system-level timing analysis.

Why Choose W9412G6IH-5?

The W9412G6IH-5 positions itself as a specification-driven DDR SDRAM device for designs that require a 128 Mbit memory with SSTL_2 signaling, clearly defined timing parameters, and documented operational commands. Its combination of 200 MHz clock support, detailed AC timing data, and a compact 66‑TSSOP package makes it suitable for systems where predictable DDR behavior and controlled signaling levels are required.

Engineers integrating this device benefit from explicit datasheet coverage of command operation, timing waveforms, and system-level timing derating tables, aiding reliable implementation and verification in supporting designs.

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